EC3H07BA Datasheet, Equivalent, Cross Reference Search
Type Designator: EC3H07BA
SMD Transistor Code: G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12500 MHz
Collector Capacitance (Cc): 0.55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: ECSP1006-3
EC3H07BA Transistor Equivalent Substitute - Cross-Reference Search
EC3H07BA Datasheet (PDF)
ec3h07ba.pdf
Ordering number : ENA1069 EC3H07BASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S Band Low-Noise AmplifierEC3H07BAand OSC ApplicationsFeatures Low noise : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=10GHz typ (VCE=1V).fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiat
ec3h07b.pdf
Ordering number : ENN6578EC3H07BNPN Epitaxial Planar Silicon TransistorEC3H07BUHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2183: fT=12.5GHz typ (VCE=3V).0.35[EC3H07B] Low operating voltage.0.20.15 0.15 High gain : S21e2=
ec3h02c.pdf
Ordering number : ENN6579EC3H02CNPN Epitaxial Planar Silicon TransistorEC3H02CVHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit : mm High gain :S21e2=12dB typ (f=1GHz). 2184 High cutoff frequency : fT=7GHz typ.[EC3H02C] Ultraminiature (1008 size) and thin (0.6mm)0.5leadless package
ec3h04b.pdf
Ordering number : ENN6577EC3H04BNPN Epitaxial Planar Type Silicon TransistorEC3H04BHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeaturesPackage Dimensions Low noise : NF=1.7dB typ (f=2GHz).unit : mm High cut-off frequency : fT=8GHz typ (VCE=1V).2183 Low operating voltage.0.35[EC3H04B] Ultraminiature (1006 size) and thin (0.5mm)0.20.15 0.15
ec3h09b.pdf
Ordering number : ENN7269EC3H09BNPN Epitaxial Planar Silicon TransistorEC3H09BHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2183: fT=11.2GHz typ (VCE=3V).[EC3H09B] Low operating voltage.0.35 Ultraminiature (1006 size) and thin (0
ec3h05b.pdf
Ordering number : ENN6574EC3H05BNPN Epitaxial Planar Type Silicon TransistorEC3H05BVHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeaturesPackage Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit : mm High gain : S21e2=13dB typ (f=1GHz).2183 Hige cutoff frequency : fT=9.0GHz typ.0.35[EC3H05B] Ultraminiature (1006 size) and thin (0.5mm) 0.20
ec3h04c.pdf
Ordering number : ENN6580EC3H04CNPN Epitaxial Planar Silicon TransistorEC3H04CHigh-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.7dB typ (f=2GHz). unit : mm Hige cut-off frequency : fT=8GHz typ (VCE=1V). 2184 Low operating voltage.[EC3H04C] Ultraminiature (1008 size) and thin (0.6mm) leadlesspackage. 0.50.2 0.
ec3h02b.pdf
Ordering number:ENN6523NPN Epitaxial Planar Silicon TransistorEC3H02BVHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2183 High cutoff frequency : fT=7GHz typ.[EC3H02B] Ultrasmall (1006size), slim (0.5mm) leadless pack-0.35age.0.20.15
ec3h03b.pdf
Ordering number : ENN6576EC3H03BNPN Epitaxial Planar Type Silicon TransistorEC3H03BVHF to UHF Wide-Band Low-Noise Amplifierand OSC ApplicationsFeaturesPackage Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit : mm High gain : S21e2=12dB typ (f=1GHz).2183 High cut-off frequency : fT=7.5GHz typ.0.35[EC3H03B] Ultraminiature (1006 size) and thin (0.5m
ec3h06b.pdf
Ordering number:ENN6524NPN Epitaxial Planar Silicon TransistorEC3H06BUHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21832 High gain : S21e =10dB typ (f=1.5GHz).[EC3H06B] High cutoff frequency : fT=11GHz typ.0.35 Low voltage, low current operation.
ec3h01b.pdf
Ordering number : ENN6573EC3H01BNPN Epitaxial Planar Silicon TransistorEC3H01BVHF Band Low-Noise Ampliferand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz). unit : mm High gain : S21e2=16dB typ (f=150MHz). 2183 Ultraminiature (1006 size) and thin (0.5mm) leadless0.35[EC3H01B]0.2package.0.15 0.150.052130.050.
ec3h02ba.pdf
Ordering number : ENA1064B EC3H02BASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-NoiseEC3H02BAAmplifier ApplicationsFeatures Low noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free com
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
