2SA1952 - описание и поиск аналогов

2SA1952 Transistors High-speed Switching Transistor (-60V, -5A) 2SA1952 Features External dimensions (Units mm) 1) High speed switching. (tf Typ. 0.15 s at IC = -3A) 2SA1952 2) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A) 5.5 1.5 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. 0.9 C0.5 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limit

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1952 TRANSISTOR (PNP) FEATURES TO-252-2L -5A,-60V Middle Power Transistor Suitable for Middle Power Driver Complementary NPN Types 2SC5103 Low Collector-emitter saturation voltage 2 1. BASE 1 3 APPLICATIONS 2. COLLECTOR Middle Power Driver LED Driver 3. EMITTER Power Suppl

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1952 DESCRIPTION Low Collector Saturation Voltage V = -0.3(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC5103 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MA

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application 1.2 0.05 0.8 0.05 Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current IC = -400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Char

2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1953 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C

2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C

2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current I = -500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit C

SMD Type Transistors PNP Transistors 2SA1953 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 C

SMD Type Transistors PNP Transistors 2SA1954 Features Low saturation voltage VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current IC = -500 mA (max) 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base V