2SA1952 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1952TransistorsHigh-speed Switching Transistor (-60V, -5A)2SA1952 Features External dimensions (Units : mm) 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)2SA19522) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A)5.5 1.53) Wide SOA. (safe operating area)4) Complements the 2SC5103.0.9C0.5 Absolute maximum ratings (Ta = 25C)Parameter Symbol Limit

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1952 TRANSISTOR (PNP)FEATURES TO-252-2L -5A,-60V Middle Power Transistor Suitable for Middle Power Driver Complementary NPN Types:2SC5103 Low Collector-emitter saturation voltage21. BASE13APPLICATIONS 2. COLLECTOR Middle Power Driver LED Driver3. EMITTER Power Suppl

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1952DESCRIPTIONLow Collector Saturation Voltage:V = -0.3(V)(Max)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC5103100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MA

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Application 1.20.05 0.80.05 Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C) Char

2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1953 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

SMD Type TransistorsPNP Transistors2SA1953SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 C

SMD Type TransistorsPNP Transistors2SA1954 Features Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -500 mA (max)1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base V