2SA2030
- Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SA2030
Маркировка: BW
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 15
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 260
MHz
Ёмкость коллекторного перехода (Cc): 6.5
pf
Статический коэффициент передачи тока (hfe): 270
Корпус транзистора:
SC-105AA
VMT3
SOT723
Аналоги (замена) для 2SA2030
2SA2030
Datasheet (PDF)
..1. Size:1677K rohm
2sa2030 2sa2018 2sa2119k.pdf 

2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO -12V IC -500mA 2SA2030 2SA2018 (VMT3) (EMT3) lFeatures l SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. VCE(sat) 250mA at IC=-200mA/IB=-10
..2. Size:139K rohm
2sa2018 2sa2018 2sa2030 2sa2119k.pdf 

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
0.1. Size:125K lrc
s-l2sa2030m3t5g.pdf 

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA
0.2. Size:125K lrc
l2sa2030m3t5g.pdf 

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA
8.1. Size:185K toshiba
2sa2034.pdf 

2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit mm High voltage VCBO = -400 V High speed tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V DC IC -2
8.2. Size:33K sanyo
2sa2031 2sc5669.pdf 

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0
8.3. Size:37K sanyo
2sa2037 2sc5694.pdf 

Ordering number ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low co
8.4. Size:367K sanyo
2sa2039-tl-e.pdf 

2SA2039/2SC5706 Ordering number EN6912C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2039/2SC5706 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage
8.5. Size:61K sanyo
2sa2039 2sc5706.pdf 

Ordering number ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin
8.6. Size:40K sanyo
2sa2039 2sc5706.pdf 

Ordering number ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4
8.7. Size:326K onsemi
2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf 

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
8.8. Size:418K onsemi
2sa2039 2sc5706.pdf 

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
8.9. Size:241K jmnic
2sa2031.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=
8.10. Size:268K inchange semiconductor
2sa2039.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2039 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC5706 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP
8.11. Size:189K inchange semiconductor
2sa2031.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2031 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown Complement to Type 2SC5669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 230V/15A AF100W output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
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