2SAR514P - описание и поиск аналогов

Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MD Driver Packaging specifications Inner circuit (Unit mm) Package

2SAR514PFRA 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -0.7A Emitter 2SAR514P 2SAR514PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR514PFRA 2) Complementary NPN Types 2SCR514P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -300mA/ -15mA) 4) Lead

2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -0.7A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR514R 3)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-300mA/-15mA) lApplication l LOW FREQUENCY AMP

2SAR513P5 Datasheet Middle Power Transistors(-50V / -1A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging spe

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MC Driver Packaging specifications Inner circuit (Unit mm) Package T

2SAR513P 2SAR513PFRA Datasheet PNP -1.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -1.0A Emitter 2SAR513P 2SAR513PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR513PFRA 2) Complementary NPN Types 2SCR513P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead F

2SAR512P FRA Datasheet Middle Power Transistor(-30V/-2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPac

2SAR512P5 Datasheet Medium Power Transistors(-30V/-2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

2SAR512R Datasheet PNP -2.0A -30V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -30V Base IC -2.0A Emitter 2SAR512R (SC-96) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR512R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) (1) (2) (3) 2) High speed switching (1)Base Applications (2)Collector Abbreviated symbol MB (3)Emitter Driver Packaging specifications Inner circuit

2SAR513R Datasheet PNP -1.0A -50V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -50V IC -1A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR513R 3)Low VCE(sat) VCE(sat)=-400mV(Max.) (IC/IB=-500A/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH