Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorTSMT3 Features1) Low saturation voltage(3)VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching(1) (2)(1) Base Applications (2) Emitter(3) Collector Abbreviated symbol : MRDriver Packaging specifications Inner

Midium Power Transistors (-50V / -4A) 2SAR543D Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

2SAR544P Data SheetPNP -2.5A -80V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-80VBase Collector IC-2.5AEmitter 2SAR544P lFeatures(SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplication

Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyCPT36.5(SC-63)5.12.3VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.52) High speed switching StructurePNP Silicon epitaxial planar transistor0.750.650.9 2.3(1) (2) (3)2.3 0.5 Applications1.0Driver Packaging spe

2SAR544P 2SAR544PFRAData SheetPNP -2.5A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBaseCollectorIC-2.5AEmitter2SAR544PFRA2SAR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR544P2SCR544PFRA3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS

2SAR542F3DatasheetPNP -3.0A -30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO-30VIC-3A2SAR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=-0.20V(Max.).(IC/IB=-1A/-50mA)3) High collector current.IC=-3A(max),

2SAR542PData SheetPNP -5.0A -30V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-30VBase Collector IC-5.0AEmitter 2SAR542P lFeatures(SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplications

2SAR542P FRADatasheetMiddle Power Transistor (-30V / -5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-5AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) =-400mV (Max.)(IC/IB=-2A/-100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGl

Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

2SAR544RDatasheetPNP -2.5A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-2.5ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR544R3)Low VCE(sat)VCE(sat)=-400mV (Max.)(IC/IB=-1A/-50mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH