Справочник транзисторов. 2N583A

 

Биполярный транзистор 2N583A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N583A
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 18 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO1

 Аналоги (замена) для 2N583A

 

 

2N583A Datasheet (PDF)

 9.2. Size:294K  fairchild semi
2n5830.pdf

2N583A
2N583A

Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-

 9.3. Size:67K  mcc
2n5832.pdf

2N583A

MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt

 9.4. Size:379K  no
2n5839.pdf

2N583A
2N583A

 9.5. Size:11K  semelab
2n5838.pdf

2N583A

2N5838Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 275V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.6. Size:77K  secos
2n5832.pdf

2N583A

2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G HJMillimeterREF. A D Min. Max.A 4.40 4.70B 4.30 4.70BC 12.70 -CollectorD 3.30 3.81KE 0.36 0.56F 0.36 0.51G 1.27 TYP.H 1.10 -

 9.7. Size:108K  jmnic
2n5838 2n5839 2n5840.pdf

2N583A
2N583A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max

 9.8. Size:50K  microelectronics
2n5830 2n5831.pdf

2N583A

 9.10. Size:117K  inchange semiconductor
2n5838 2n5839 2n5840.pdf

2N583A
2N583A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto

Другие транзисторы... 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 , 2N5839 , 2SD718 , 2N584 , 2N5840 , 2N5841 , 2N5842 , 2N5843 , 2N5844 , 2N5845 , 2N5845A .

 

 
Back to Top