2SD2114K - аналоги, параметры транзистора - Справочник транзисторов

2SD2114K даташит

..1. Size:89K rohm
2sd2114k 2sd2144s.pdf pdf_icon

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty

0.1. Size:157K rohm
2sd2114ks.pdf pdf_icon

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 hFE = 1200 (Typ.) 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0 0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0

0.2. Size:89K rohm
2sd2114k-s.pdf pdf_icon

0.3. Size:106K lrc
l2sd2114kvlt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT 2