All Transistors. 2SD2114K Datasheet

 

2SD2114K Datasheet and Replacement


   Type Designator: 2SD2114K
   SMD Transistor Code: BBV_BBW
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SMT3 SC-59
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2SD2114K Datasheet (PDF)

 ..1. Size:89K  rohm
 2sd2114k 2sd2144s.pdf pdf_icon

2SD2114K

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

 0.1. Size:157K  rohm
 2sd2114ks.pdf pdf_icon

2SD2114K

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K2.90.21.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.10.80.10.95 0.952) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 00.13) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.10.15-0.06+0.10.4-0

 0.2. Size:89K  rohm
 2sd2114k-s.pdf pdf_icon

2SD2114K

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

 0.3. Size:106K  lrc
 l2sd2114kvlt1g.pdf pdf_icon

2SD2114K

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistorL2SD2114KVLT1G Series FeaturesS-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.3VEBO =12V (Min.)3) Low VCE (sat).1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 2

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History: NTE2547 | 2SC944 | THA42TTD03 | 2N3000 | 2N3134S | RN1909 | BD723

Keywords - 2SD2114K transistor datasheet

 2SD2114K cross reference
 2SD2114K equivalent finder
 2SD2114K lookup
 2SD2114K substitution
 2SD2114K replacement

 

 
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