2SD2114K PDF and Equivalents Search

 

2SD2114K Specs and Replacement

Type Designator: 2SD2114K

SMD Transistor Code: BBV_BBW

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SMT3 SC-59

 2SD2114K Substitution

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2SD2114K datasheet

 ..1. Size:89K  rohm

2sd2114k 2sd2144s.pdf pdf_icon

2SD2114K

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty... See More ⇒

 0.1. Size:157K  rohm

2sd2114ks.pdf pdf_icon

2SD2114K

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 hFE = 1200 (Typ.) 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0 0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0... See More ⇒

 0.2. Size:89K  rohm

2sd2114k-s.pdf pdf_icon

2SD2114K

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty... See More ⇒

 0.3. Size:106K  lrc

l2sd2114kvlt1g.pdf pdf_icon

2SD2114K

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT 2... See More ⇒

Detailed specifications: 2SCR553P, 2SCR554P, 2SCR554R, 2SD1383K, 2SD1484K, 2SD1757K, 2SD1781K, 2SD1782K, BD140, 2SD2142K, 2SD2143, 2SD2153, 2SD2226K, 2SD2351, 2SD2391, 2SD2444K, 2SD2537

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