2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.12) High input impedance. 0.4 0.8(3) Inner circuit (2) (1)C0.95 0.950.151.9(1)Emitter(2)BaseB Each lead has same dimensions(3)Collector

2SD2142K / 2SC2062STransistorsTransistors2SD2470(94L-570-D25)(SPEC-D230)316Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for ref

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. AL High input impedance. 33Top View C BMARKING 11 22K ER1M DH JF GPACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

2S 2142 DTRANSISOR (NPN)SOT23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBOI Collector Current 300 mA C

SMD Type TransistorsNPN Transistors2SD2142SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=32V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle