2SD2142K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit mm) Features 1) Darlington connection for a high hFE. SMT3 (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.1 2) High input impedance. 0.4 0.8 (3) Inner circuit (2) (1) C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector

2SD2142K / 2SC2062S Transistors Transistors 2SD2470 (94L-570-D25) (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for ref

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. A L High input impedance. 3 3 Top View C B MARKING 1 1 2 2 K E R1M D H J F G PACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

2S 2142 D TRANSISOR (NPN) SOT 23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBO I Collector Current 300 mA C

SMD Type Transistors NPN Transistors 2SD2142 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle