2SD2662 - Даташиты. Аналоги. Основные параметры

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FZ Packaging specifications Absolute maximum ratings (Ta=25

Ordering number ENN7380 2SB1700 / 2SD2663 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1700 / 2SD2663 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2042B [2SB1700 / 2SD2663] 8.0 Features 4.0 3.3 1.0 1.0 High DC current gain. Large current capacity and wide

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit mm) Features Low VCE(sat) 180mV 4.0 (IC / IB = 1A / 50mA) 1.0 2.5 0.5 (1) (2) (3) (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FW Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Li

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit mm High-Power Switching Applications High-breakdown voltage VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage

2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-em

2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2695 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit mm High Speed Switching Applications. High voltage VCBO = 1700 V Low saturation voltage V = 5 V (max) CE (sat) High speed t = 0.8 s (max) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector

Ordering number ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2689LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base

Ordering number ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2649] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

Ordering number ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0

Ordering number ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2646] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

Ordering number ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2688LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9

Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26

Ordering number ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2645] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

Ordering number ENN6500A 2SD2624 NPN Triple Diffused Planar Silicon Transistor 2SD2624 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2624] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

Ordering number ENN6352 NPN Triple Diffused Planar Silicon Transistor 2SD2629 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079C High reliability (Adoption of HVP process). [2SD2629] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0.7 0.75

Ordering number ENN6474B 2SD2634 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2634] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0

Ordering number ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 1.

Ordering number ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit mm 2064A Features [2SD2635] 2.5 Darlington connection 1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature. 0.6 0.9 0.5 1 2 3 0.45 1

Ordering number ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2650] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Ba

Ordering number ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079D High reliability (Adoption of HVP process). [2SD2658LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0

Ordering number ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2648] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

Preliminary Datasheet 2SD2655 R07DS0281EJ0300 (Previous REJ03G0810-0200) Silicon NPN Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW

2SD2653 Transistors Low frequency amplifier 2SD2653 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) 180mV ( ) ( ) 1 2 0.95 0.95 at IC = 1A / IB = 50mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute m

2SD2652 Transistors General purpose amplification (12V, 1.5A) 2SD2652 External dimensions (Units mm) Application Low frequency amplifier Features 1.25 1) A collector current is large. 2.1 2) Collector saturation voltage is low. VCE(sat) 200mV 0.1Min. At IC = 500mA / IB = 25mA Each lead has same dimensions ROHM UMT3 (1) Emitter Abbreviated symbol EW EIAJ SC-70 (2

2SD2656 2SD2656FRA Datasheet NPN 1A 30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector VCEO 30V Base IC 1A Emitter 2SD2656FRA 2SD2656 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) is Max. 350mV At IC=500mA, IB=25mA 3) Complementary PNP Types 2S

2SD2653K Transistors Low frequency amplifier 2SD2653K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 180mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol FW (1) Emitter ROHM SMT3 EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector Absolute m

2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base

2SD2656 Transistors General purpose amplification (30V, 1A) 2SD2656 Application Low frequency amplifier 1.25 Features 2.1 1) A collector current is large. 2) Collector saturation voltage is low. 0.1Min. VCE(sat) 350mV Each lead has same dimensions At IC = 500mA / IB = 25mA ROHM UMT3 (1) Emitter Abbreviated symbol EU EIAJ SC-70 (2) Base JEDEC SOT-323 (

2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 5A) 2SD2614 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to 10.0 4.5 "L" loads. 3.2 2.8 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1)

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector

2SD2696 Datasheet Low frequency transistor (for amplification) lOutline l Parameter Value VMT3 VCEO 30V IC 400mA SOT-723 SC-105AA lFeatures l 1)The transistor of 400mA class which went only lInner circuit l with 2012 size conventionally is attained in 1208 size. 2)Collector saturation voltage is low

2SD2607 Transistors Power Transistor (100V, 8A) 2SD2607 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3.2 2.8 3) Built-in damper diode. 4) Complements the 2SB1668. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 Absolute maximum ratings (Ta = 25 C) (1) (2) (3) ( ) (1) (2) (3) (1) B

2SD2657KFRA AEC-Q101 Qualified 2SD2657KFRA

2SD2611 Transistors Power Transistor (80V, 7A) 2SD2611 Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collecto

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor

2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 Features Circuit diagram 1) Darlington connection for a high hFE. C 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. B R 300 R B Base C Collector E E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V C

2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 1.0MAX 2.9 0.85 Features 0.7 0.4 (3) 1) A collector current is large. 2) Collector saturation voltage is low. 1 2 VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 500mA / IB = 25mA 1.9 (1) Base (2) Emitter Each lead

2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 1 2 2) VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 1A / IB = 50mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging

2SD2654 Datasheet General purpose Transistor (50V, 150mA) lOutline l SOT-416 Parameter Value SC-75A VCEO 50V IC 150mA EMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQUENCY AMPLIFIER, DRIVER

2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 Features Circuit diagram 1) Darlington connection for high DC current gain. C 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. B R1 R2 E R1 5.0k B Base C Collector R2 300 E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector

2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( ) 1 2 0.95 0.95 At IC = 2A / IB = 40mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Pac

2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. (3A) ( ) ( ) 2) VCE(sat) max. 250mV 1 2 0.95 0.95 0.16 At IC = 1.5A / IB = 30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector P

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector

2SD2674 Datasheet General purpose amplification (12V, 1.5A) lOutline l SOT-346T Parameter Value SC-96 VCEO 12V IC 1.5A TSMT3 lFeatures lInner circuit l l 1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat) 200mV at IC=500mA/IB=25mA lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificat

2SD2616 Transisitors Power Transistor (100V, 5A) 2SD2616 Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25 C) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V 5 A(DC) C

2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XZ NPN epitaxial planar silicon transistor

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base

Transistors 2SD2620J Silicon NPN epitaxial planer type Unit mm For low-frequency amplification 1.60+0.05 0.03 0.12+0.03 0.01 1.00 0.05 3 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 1 2 High emitter to base voltage VBEO 0.27 0.02 (0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.65) Absolute Maximum Ratings Ta = 25 C 1.3 0.1 Parameter Symbol Rating Unit 2

Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in Excellent package with withstand voltage 5 kV guaranteed 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.1

Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings Ta

2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2651 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltag

2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A (Z) Rev.1 Jun. 2001 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Comple

Power Transistor 2SD2633 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 I A V 200 V CBO V =200V 100max CBO CB 10.0 3.3 2.8 C0.5 V 150 V I V =6V 10max mA CEO EBO EB I =50mA V 6 V V C 150min V EBO CEO I 8 A h V =2V, I =6A 2000min C FE CE C I 1 A V I =6

C Equivalent circuit B Darlington 2SD2643 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

C Equivalent circuit B Darlington 2SD2642 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

Equivalent circuit C B Darlington 2SD2641 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Symbol Ratings Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

Transistors 2SD261

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2603(BR3DD2603F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, low VCE(sat). / Applications Power out amplifier applications. / Equivalent Circuit

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

isc Silicon NPN Darlington Power Transistor 2SD2633 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V =1.5V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur

isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1687 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2634 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon NPN Power Transistor 2SD2689 DESCRIPTION High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV Horizontal Deflection Output Applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co