Биполярный транзистор 2SD2671 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2671
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 280 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 270
Корпус транзистора: TSMT3
2SD2671 Datasheet (PDF)
2sd2671.pdf
2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) : max. 370mV (1) (2)0.95 0.95 At lc=1.5A / lB=75mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute maxi
2sd2670.pdf
2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7( )3 Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) : max.250mV 0.95 0.950.16 At lc=1.5A / lB=30mA 1.9(1) Base(2) EmitterEach lead has same dimensions (3) Collector Abso
2sd2678.pdf
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XXNPN epitaxial planar silicon transistor
2sd2675.pdf
2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT31.0MAX2.90.85 Features 0.70.4(3)1) A collector current is large. 2) Collector saturation voltage is low. 1 2VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 500mA / IB = 25mA 1.9(1) Base(2) EmitterEach lead
2sd2672.pdf
2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( )1 20.95 0.95At IC = 2A / IB = 40mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Pac
2sd2673.pdf
2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7(3) Features 1) A collector current is large. (3A) ( ) ( )2) VCE(sat) : max. 250mV 1 20.95 0.950.16At IC = 1.5A / IB = 30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector P
2sd2674.pdf
2SD2674DatasheetGeneral purpose amplification (12V, 1.5A)lOutlinel SOT-346T Parameter Value SC-96 VCEO12VIC1.5ATSMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector saturation voltage is low. VCE(sat)200mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificat
2sd2679.pdf
2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XZNPN epitaxial planar silicon transistor
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050