2SD2672 - Даташиты. Аналоги. Основные параметры

2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( ) 1 2 0.95 0.95 At IC = 2A / IB = 40mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Pac

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor

2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 1.0MAX 2.9 0.85 Features 0.7 0.4 (3) 1) A collector current is large. 2) Collector saturation voltage is low. 1 2 VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 500mA / IB = 25mA 1.9 (1) Base (2) Emitter Each lead

2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. (3A) ( ) ( ) 2) VCE(sat) max. 250mV 1 2 0.95 0.95 0.16 At IC = 1.5A / IB = 30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector P

2SD2674 Datasheet General purpose amplification (12V, 1.5A) lOutline l SOT-346T Parameter Value SC-96 VCEO 12V IC 1.5A TSMT3 lFeatures lInner circuit l l 1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat) 200mV at IC=500mA/IB=25mA lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificat

2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XZ NPN epitaxial planar silicon transistor