DTA123JE datasheet, аналоги, основные параметры
Наименование производителя: DTA123JE 📄📄
Маркировка: 132_6M_E32
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: EMT3
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Аналоги (замена) для DTA123JE
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DTA123JE даташит
..1. Size:68K rohm
dta123je dta123jka dta123jsa.pdf 
Transistors Digital transistors (built-in resistors) DTA123JE / DTA123JUA / DTA123JKA / DTA123JSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi
..2. Size:240K mcc
dta123je sot-523.pdf 
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTA123JE Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
..3. Size:544K htsemi
dta123jca dta123je dta123jka dta123jsa dta123jua.pdf 
DTA123JKA/DTA123JCA/DTA123JSA DTA123JE/DTA123JUA/ TRANSISTOR(PNP) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost complet
..4. Size:336K willas
dta123je.pdf 
FM120-M WILLAS DTA123JE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to Features optimize
0.1. Size:54K motorola
pdta123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
0.2. Size:57K motorola
pdta123je 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d
0.3. Size:54K philips
pdta123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
0.4. Size:57K philips
pdta123je 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d
0.5. Size:1050K nxp
pdta123je pdta123jm pdta123jt pdta123ju.pdf 
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.6. Size:69K rohm
dta123je-jua-jka 132 132 e32 sot416 323 346.pdf 
Transistors Digital transistors (built-in resistors) DTA123JE / DTA123JUA / DTA123JKA / DTA123JSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi
0.7. Size:1531K rohm
dta123jefra dta123jkafra dta123jmfha dta123juafra.pdf 
DTA123J series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC -50V IC(MAX.) -100mA R1 2.2k DTA123JM DTA123JEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTA123JE DT
0.8. Size:93K diodes
ddta123je.pdf 
DDTA (R1 R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary NPN Types Available (DDTC) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1 R2 Moisture Sensitivity L
0.9. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf 
DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.11. Size:119K chenmko
chdta123jegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTA123JEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
Другие транзисторы: DTA114WE, DTA114YEB, DTA114YM, DTA114YUB, DTA115EEB, DTA115EM, DTA123EE, DTA123EM, 2SD718, DTA123JEB, DTA123JM, DTA123JUA, DTA123JUB, DTA123YE, DTA124EE, DTA124EEB, DTA124EM
