Биполярный транзистор DTC114YUA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTC114YUA
Маркировка: 64
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 68
Корпус транзистора: UMT3
Аналоги (замена) для DTC114YUA
DTC114YUA Datasheet (PDF)
dtc114yua sot-323.pdf
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC114YUAFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th
dtc114yca dtc114ye dtc114yka dtc114ysa dtc114yua.pdf
DTC114YE/DTC114YUA /DTC114YKA/DTC114YSA/DTC114YCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost c
dtc114yua.pdf
FM120-M WILLASDTC114YUATHRUNPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFea Batch process design, excellent power dissipation offersFeaturestures better reverse leakage current and thermal resistance.SOD-123H SOT-323 Low profile surface mounted application in order
dtc114yefra dtc114ykafra dtc114ymfha dtc114yuafra.pdf
DTC114Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114YM DTC114YEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y
ddtc114yua.pdf
DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R
dtc114yub.pdf
Transistors DTC114YUB 100mA / 50V Digital transistors (with built-in resistors) DTC114YUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi
chdtc114yugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC114YUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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