DTC123EM - аналоги и даташиты биполярного транзистора

 

DTC123EM - Даташиты. Аналоги. Основные параметры


   Наименование производителя: DTC123EM
   Маркировка: 22
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 2.2 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: SC-105AA VMT3 SOT723

 Аналоги (замена) для DTC123EM

 

DTC123EM Datasheet (PDF)

 0.1. Size:2061K  rohm
dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdfpdf_icon

DTC123EM

DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC 50V IC(MAX.) 100mA R1 2.2k DTC123EM DTC123EE DTC123EMFHA DTC123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k

 0.2. Size:109K  onsemi
nsvdtc123em3t5g.pdfpdf_icon

DTC123EM

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 0.3. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdfpdf_icon

DTC123EM

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 0.4. Size:82K  onsemi
dtc114em3t5g dtc114tm3t5g dtc114ym3t5g dtc123em3t5g.pdfpdf_icon

DTC123EM

DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis

Другие транзисторы... DTC114WE , DTC114YEB , DTC114YM , DTC114YUA , DTC114YUB , DTC115EEB , DTC115EM , DTC123EE , TIP3055 , DTC123JEB , DTC123JM , DTC123JUB , DTC123YE , DTC124EEB , DTC124EM , DTC124EUB , DTC124XM .

History: KRC120 | KT385AM-2 | KRC158F | KT638A | KT604BM

 

 
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