Справочник транзисторов. DTC123JM

 

Биполярный транзистор DTC123JM Даташит. Аналоги


   Наименование производителя: DTC123JM
   Маркировка: E42
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SC-105AA VMT3 SOT723
 

 Аналог (замена) для DTC123JM

   - подбор ⓘ биполярного транзистора по параметрам

 

DTC123JM Datasheet (PDF)

 0.1. Size:1527K  rohm
 dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf pdf_icon

DTC123JM

DTC123J seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R12.2kDTC123JM DTC123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

 0.2. Size:156K  onsemi
 dtc123jm3.pdf pdf_icon

DTC123JM

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 0.3. Size:82K  onsemi
 dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf pdf_icon

DTC123JM

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 0.4. Size:399K  onsemi
 mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf pdf_icon

DTC123JM

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... DTC114YM , DTC114YUA , DTC114YUB , DTC115EEB , DTC115EM , DTC123EE , DTC123EM , DTC123JEB , TIP122 , DTC123JUB , DTC123YE , DTC124EEB , DTC124EM , DTC124EUB , DTC124XM , DTC143EEB , DTC143EKA .

 

 
Back to Top

 


 
.