Справочник транзисторов. DTD113ZK

 

Биполярный транзистор DTD113ZK - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTD113ZK
   Маркировка: T146
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 10 kOhm
   Соотношение сопротивлений R1/R2 = 0.1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 82
   Корпус транзистора: SMT3 SC59

 Аналоги (замена) для DTD113ZK

 

 

DTD113ZK Datasheet (PDF)

 ..1. Size:139K  rohm
dtd113zk-zk dtd113zk.pdf

DTD113ZK DTD113ZK

500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD113ZK0.4 0.8(3) Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input (2) (1)resistors (see equivalent circuit). 0.95 0.952) The bias resisto

 0.1. Size:139K  chenmko
chdtd113zkgp.pdf

DTD113ZK DTD113ZK

CHENMKO ENTERPRISE CO.,LTDCHDTD113ZKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 7.1. Size:64K  philips
pdtd113zt.pdf

DTD113ZK DTD113ZK

PDTD113ZTNPN 500 mA, 50 V resistor-equipped transistor;R1 = 1 k, R2 = 10 kRev. 02 23 March 2009 Product data sheet1. Product profile1.1 General descriptionNPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-MountedDevice (SMD) plastic package.PNP complement: PDTB113ZT.1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des

 7.2. Size:77K  rohm
dtd113zs.pdf

DTD113ZK DTD113ZK

DTD113ZK / DTD113ZU / DTD113ZS Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU / DTD113ZS External dimensions (Unit : mm) Applications Inverter, Interface, Driver 2.9 1.1DTD113ZK 0.4 0.8(3) Features 1) Built-in bias resistors enable theconfiguration of an ( ) (1)2inverter circuit without connecting external input 0.95

 7.3. Size:70K  diodes
ddtd113zc.pdf

DTD113ZK DTD113ZK

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 7.4. Size:167K  diodes
ddtd113zu.pdf

DTD113ZK DTD113ZK

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 7.5. Size:186K  utc
dtd113z.pdf

DTD113ZK DTD113ZK

UNISONIC TECHNOLOGIES CO., LTD DTD113Z NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR 33(BUILT- IN BIAS RESISTORS) 1122SOT-523 FEATURES SOT-323* Built-in bias resistors that implies easy ON/OFF applications. 3* The bias resistors are thin-film resistors with complete isolation to allow negative input. 1 EQUIVALENT CIRCUIT 2SOT-231TO-92 ORDERING IN

 7.6. Size:145K  jiangsu
dtd113zua.pdf

DTD113ZK

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTD113ZUA DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of

 7.7. Size:151K  cystek
dtd113zn3.pdf

DTD113ZK DTD113ZK

Spec. No. : C379N3 Issued Date : 2003.10.05 CYStech Electronics Corp. Revised Date : 2004.02.26 Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD113ZN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w

 7.8. Size:357K  lrc
ldtd113zet1g.pdf

DTD113ZK DTD113ZK

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD113ZET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.9. Size:1000K  kexin
dtd113z.pdf

DTD113ZK DTD113ZK

SMD Type TransistorsDigital TransistorsDTD113Z (KDTD113Z)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95-0.1 0.1-0.01+0.1 isola

 7.10. Size:172K  chenmko
chdtd113zugp.pdf

DTD113ZK DTD113ZK

CHENMKO ENTERPRISE CO.,LTDCHDTD113ZUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

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