Справочник транзисторов. 2N587

 

Биполярный транзистор 2N587 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N587
   Тип материала: Ge
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 40 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 85 °C
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO5

 Аналоги (замена) для 2N587

 

 

2N587 Datasheet (PDF)

 0.1. Size:170K  motorola
2n5877 2n5878.pdf

2N587
2N587

Order this documentMOTOROLAby 2N5877/DSEMICONDUCTOR TECHNICAL DATANPN2N5877Complementary Silicon2N5878High-Power Transistors. . . designed for generalpurpose power amplifier and switching applications.10 AMPERE Low CollectorEmitter Saturation Voltage COMPLEMENTARYVCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 AdcSILICON Low Leakage Current POWER TRANSISTOR

 0.2. Size:252K  motorola
2n5879 2n5880 2n5881 2n5882.pdf

2N587
2N587

Order this documentMOTOROLAby 2N5879/DSEMICONDUCTOR TECHNICAL DATAPNP2N5879Complementary Silicon2N5880*High-Power TransistorsNPN. . . designed for generalpurpose power amplifier and switching applications.2N5881 CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882*2N5882 DC Cur

 0.3. Size:71K  central
2n5875 2n5876 2n5877 2n5878.pdf

2N587

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.4. Size:70K  central
2n5879 2n5880 2n5881 2n5882.pdf

2N587

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.5. Size:124K  mospec
2n5875-78.pdf

2N587
2N587

AAA

 0.6. Size:11K  semelab
2n5870.pdf

2N587

2N5870Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.7. Size:12K  semelab
2n5872.pdf

2N587

2N5872Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.8. Size:11K  semelab
2n5871.pdf

2N587

2N5871Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.9. Size:11K  semelab
2n5873.pdf

2N587

2N5873Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.10. Size:12K  semelab
2n5874.pdf

2N587

2N5874Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.11. Size:186K  bocasemi
2n5879 2n5880 2n5881 2n5882.pdf

2N587
2N587

ABoca Semiconductor Corp. BSC http://www.bocasemi.comAABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

 0.12. Size:117K  inchange semiconductor
2n5879 2n5880.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu

 0.13. Size:117K  inchange semiconductor
2n5875 2n5876.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5877 2N5878 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu

 0.14. Size:118K  inchange semiconductor
2n5869 2n5870.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 0.15. Size:116K  inchange semiconductor
2n5873 2n5874.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 0.16. Size:116K  inchange semiconductor
2n5871 2n5872.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 0.17. Size:117K  inchange semiconductor
2n5877 2n5878.pdf

2N587
2N587

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5875 2N5876 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsol

Другие транзисторы... 2N5860 , 2N5861 , 2N5862 , 2N5864 , 2N5865 , 2N5867 , 2N5868 , 2N5869 , 2SC1815 , 2N5870 , 2N5871 , 2N5871-1 , 2N5871-2 , 2N5872 , 2N5872A , 2N5872B , 2N5873 .

 

 
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