2N587 Specs and Replacement
Type Designator: 2N587
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
2N587 datasheet
0.1. Size:170K motorola
2n5877 2n5878.pdf 
Order this document MOTOROLA by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 Complementary Silicon 2N5878 High-Power Transistors . . . designed for general purpose power amplifier and switching applications. 10 AMPERE Low Collector Emitter Saturation Voltage COMPLEMENTARY VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc SILICON Low Leakage Current POWER TRANSISTOR... See More ⇒
0.2. Size:252K motorola
2n5879 2n5880 2n5881 2n5882.pdf
Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2N5880* High-Power Transistors NPN . . . designed for general purpose power amplifier and switching applications. 2N5881 Collector Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882 * 2N5882 DC Cur... See More ⇒
0.6. Size:11K semelab
2n5870.pdf
2N5870 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
0.7. Size:12K semelab
2n5872.pdf
2N5872 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
0.8. Size:11K semelab
2n5871.pdf
2N5871 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
0.9. Size:11K semelab
2n5873.pdf
2N5873 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
0.10. Size:12K semelab
2n5874.pdf
2N5874 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
0.11. Size:186K bocasemi
2n5879 2n5880 2n5881 2n5882.pdf
A Boca Semiconductor Corp. BSC http //www.bocasemi.com A A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒
0.12. Size:117K inchange semiconductor
2n5879 2n5880.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu... See More ⇒
0.13. Size:117K inchange semiconductor
2n5875 2n5876.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5877 2N5878 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu... See More ⇒
0.14. Size:118K inchange semiconductor
2n5869 2n5870.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
0.15. Size:116K inchange semiconductor
2n5873 2n5874.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
0.16. Size:116K inchange semiconductor
2n5871 2n5872.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER ... See More ⇒
0.17. Size:117K inchange semiconductor
2n5877 2n5878.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5875 2N5876 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absol... See More ⇒
Detailed specifications: 2N5860, 2N5861, 2N5862, 2N5864, 2N5865, 2N5867, 2N5868, 2N5869, 2SD313, 2N5870, 2N5871, 2N5871-1, 2N5871-2, 2N5872, 2N5872A, 2N5872B, 2N5873
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