Биполярный транзистор 2N6932 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6932
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 650 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO3PN
2N6932 Datasheet (PDF)
2n6931 2n6932.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat
2n6932.pdf
isc Silicon NPN Power Transistor 2N6932DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6931 2n6932.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs
2n6931.pdf
isc Silicon NPN Power Transistor 2N6931DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6935.pdf
isc Silicon NPN Power Transistor 2N6935DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6933 2n6934.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6933 2N6934 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
2n6933 2n6934 2n6935.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION High Switching Speed High Voltage APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT2N6933 450VCEV Collector-Emitter 2N6934 550 V Voltage (VBE= -1.5V) 2N6935 6
2n6933.pdf
isc Silicon NPN Power Transistor 2N6933DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6934.pdf
isc Silicon NPN Power Transistor 2N6934DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
