Справочник транзисторов. 2N6932

 

Биполярный транзистор 2N6932 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N6932
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 650 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: TO3PN

 Аналоги (замена) для 2N6932

 

 

2N6932 Datasheet (PDF)

 ..1. Size:156K  jmnic
2n6931 2n6932.pdf

2N6932
2N6932

JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat

 ..2. Size:185K  inchange semiconductor
2n6932.pdf

2N6932
2N6932

isc Silicon NPN Power Transistor 2N6932DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

 ..3. Size:120K  inchange semiconductor
2n6931 2n6932.pdf

2N6932
2N6932

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

 9.1. Size:72K  njs
2n6935-34-33.pdf

2N6932
2N6932

 9.2. Size:191K  inchange semiconductor
2n6931.pdf

2N6932
2N6932

isc Silicon NPN Power Transistor 2N6931DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

 9.3. Size:191K  inchange semiconductor
2n6935.pdf

2N6932
2N6932

isc Silicon NPN Power Transistor 2N6935DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

 9.4. Size:140K  inchange semiconductor
2n6933 2n6934.pdf

2N6932
2N6932

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6933 2N6934 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 9.5. Size:153K  inchange semiconductor
2n6933 2n6934 2n6935.pdf

2N6932
2N6932

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION High Switching Speed High Voltage APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT2N6933 450VCEV Collector-Emitter 2N6934 550 V Voltage (VBE= -1.5V) 2N6935 6

 9.6. Size:198K  inchange semiconductor
2n6933.pdf

2N6932
2N6932

isc Silicon NPN Power Transistor 2N6933DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

 9.7. Size:183K  inchange semiconductor
2n6934.pdf

2N6932
2N6932

isc Silicon NPN Power Transistor 2N6934DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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