2N6932 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6932
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3PN
2N6932 Transistor Equivalent Substitute - Cross-Reference Search
2N6932 Datasheet (PDF)
2n6931 2n6932.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat
2n6932.pdf
isc Silicon NPN Power Transistor 2N6932DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6931 2n6932.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs
2n6931.pdf
isc Silicon NPN Power Transistor 2N6931DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6935.pdf
isc Silicon NPN Power Transistor 2N6935DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6933 2n6934.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6933 2N6934 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
2n6933 2n6934 2n6935.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION High Switching Speed High Voltage APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT2N6933 450VCEV Collector-Emitter 2N6934 550 V Voltage (VBE= -1.5V) 2N6935 6
2n6933.pdf
isc Silicon NPN Power Transistor 2N6933DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
2n6934.pdf
isc Silicon NPN Power Transistor 2N6934DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N841 | PN4249 | PMD9001D
