Справочник транзисторов. 2SA1659A

 

Биполярный транзистор 2SA1659A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1659A
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO220F

 Аналоги (замена) для 2SA1659A

 

 

2SA1659A Datasheet (PDF)

 ..1. Size:155K  jmnic
2sa1659 2sa1659a.pdf

2SA1659A
2SA1659A

JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C

 ..2. Size:115K  inchange semiconductor
2sa1659 2sa1659a.pdf

2SA1659A
2SA1659A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fTAPPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SY

 7.1. Size:196K  inchange semiconductor
2sa1659.pdf

2SA1659A
2SA1659A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type 2SC4370Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage appl

 8.1. Size:88K  sanyo
2sa1656 2sc4363.pdf

2SA1659A
2SA1659A

 8.2. Size:88K  sanyo
2sa1654 2sc4361.pdf

2SA1659A
2SA1659A

 8.3. Size:161K  nec
2sa1652.pdf

2SA1659A
2SA1659A

DATA SHEETSILICON POWER TRANSISTOR2SA1652PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andot

 8.4. Size:148K  nec
2sa1650.pdf

2SA1659A
2SA1659A

DATA SHEETSILICON POWER TRANSISTOR2SA1650PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andother low-

 8.6. Size:151K  jmnic
2sa1658.pdf

2SA1659A
2SA1659A

JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 8.7. Size:175K  jmnic
2sa1651.pdf

2SA1659A
2SA1659A

JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Em

 8.8. Size:214K  inchange semiconductor
2sa1658.pdf

2SA1659A
2SA1659A

isc Silicon PNP Power Transistor 2SA1658DESCRIPTIONCollector-Emitter Breakdown VoltageV = -30V(Min)CEOComplement to Type 2SC4369Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM

 8.9. Size:210K  inchange semiconductor
2sa1657.pdf

2SA1659A
2SA1659A

isc Silicon PNP Power Transistor 2SA1657DESCRIPTIONCollector-Emitter Breakdown VoltageV = -150V(Min)CEOComplement to Type 2SC4368Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSO

 8.10. Size:213K  inchange semiconductor
2sa1651.pdf

2SA1659A
2SA1659A

isc Silicon PNP Power Transistor 2SA1651DESCRIPTIONCollector-Emitter Breakdown VoltageV = -100V(Min)CEOFast switching speedLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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