2SA1659A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1659A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220F
2SA1659A Transistor Equivalent Substitute - Cross-Reference Search
2SA1659A Datasheet (PDF)
2sa1659 2sa1659a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C
2sa1659 2sa1659a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fTAPPLICATIONS High voltage applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SY
2sa1659.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type 2SC4370Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage appl
2sa1652.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1652PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andot
2sa1650.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1650PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching and features a very low collector-to-emittersaturation. This transistor is ideal for use in switching powersupplies, DC/DC converters, motor drivers, solenoid drivers, andother low-
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2sa1658.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
2sa1651.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION1 Em
2sa1658.pdf
isc Silicon PNP Power Transistor 2SA1658DESCRIPTIONCollector-Emitter Breakdown VoltageV = -30V(Min)CEOComplement to Type 2SC4369Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM
2sa1657.pdf
isc Silicon PNP Power Transistor 2SA1657DESCRIPTIONCollector-Emitter Breakdown VoltageV = -150V(Min)CEOComplement to Type 2SC4368Full-mold package that does not require an insulatingboard or bushing when mounting.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSO
2sa1651.pdf
isc Silicon PNP Power Transistor 2SA1651DESCRIPTIONCollector-Emitter Breakdown VoltageV = -100V(Min)CEOFast switching speedLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .