JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3

Power Transistors2SB1393, 2SB1393ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD1985 and 2SD1985AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory linearity of foward current transfer ratio hFE5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink withone screw 3.1

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

isc Silicon PNP Power Transistor 2SB1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.2V(Max,)@ I = -3ACE(sat) CComplement to Type 2SD1985Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.