2SB1393A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1393A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220FA
2SB1393A Transistor Equivalent Substitute - Cross-Reference Search
2SB1393A Datasheet (PDF)
2sb1393a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute
2sb1393 2sb1393a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3
2sb1393.pdf
Power Transistors2SB1393, 2SB1393ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD1985 and 2SD1985AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory linearity of foward current transfer ratio hFE5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink withone screw 3.1
2sb1393.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute
2sb1393.pdf
isc Silicon PNP Power Transistor 2SB1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.2V(Max,)@ I = -3ACE(sat) CComplement to Type 2SD1985Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
