Справочник транзисторов. 2SC3973B

 

Биполярный транзистор 2SC3973B - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3973B
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO220FA

 Аналоги (замена) для 2SC3973B

 

 

2SC3973B Datasheet (PDF)

 ..1. Size:117K  inchange semiconductor
2sc3973b.pdf

2SC3973B
2SC3973B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION With TO-220Fa package High voltage,high speed Wide area of safe operation APPLICATIONS For high voltage,high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol3 Emi

 7.1. Size:60K  panasonic
2sc3973.pdf

2SC3973B
2SC3973B

Power Transistors2SC3973, 2SC3973ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 7.2. Size:179K  jmnic
2sc3973.pdf

2SC3973B
2SC3973B

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAb

 7.3. Size:211K  inchange semiconductor
2sc3973.pdf

2SC3973B
2SC3973B

isc Silicon NPN Power Transistor 2SC3973DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 7.4. Size:142K  inchange semiconductor
2sc3973 2sc3973a.pdf

2SC3973B
2SC3973B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and sym

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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