2SD2400 datasheet и подбор замены

 ..1. Size:198K  inchange semiconductor
 2sd2400.pdf 

isc Silicon NPN Power Transistor 2SD2400 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1569 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 0.1. Size:48K  rohm
 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf 

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

 8.1. Size:123K  toshiba
 2sd2406.pdf 

2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit mm High power dissipation PC = 25 W (Tc = 25 C) Good hFE linearity Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 4 A

 8.2. Size:137K  nec
 2sd2403.pdf 

DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES High current capacitance Low collector saturation voltage Co

 8.3. Size:112K  nec
 2sd2402.pdf 

DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES High current capacitance Low collector saturation voltage Co

 8.4. Size:99K  jmnic
 2sd2401.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum r

 8.5. Size:24K  sanken-ele
 2sd2401.pdf 

Equivalent circuit C B Darlington 2SD2401 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2401 Symbol Conditions 2SD2401 Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB=160V

 8.6. Size:648K  kexin
 2sd2403.pdf 

SMD Type Transistors NPN Transistors 2SD2403 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 Complementary to 2SB1572 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VE

 8.7. Size:649K  kexin
 2sd2402.pdf 

SMD Type Transistors NPN Transistors 2SD2402 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 Complementary to 2SB1571 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

 8.8. Size:206K  inchange semiconductor
 2sd2401.pdf 

isc Silicon NPN Darlington Power Transistor 2SD2401 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1570 Minimum Lot-to-Lot variations for robust device performance and reliable op

 8.9. Size:213K  inchange semiconductor
 2sd2406.pdf 

isc Silicon NPN Power Transistor 2SD2406 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO