2SD2400 Datasheet and Replacement

isc Silicon NPN Power Transistor 2SD2400DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1569Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm High power dissipation: PC = 25 W (Tc = 25C) Good hFE linearity Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 4 A

DATA SHEETSILICON TRANSISTOR2SD2403NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2403 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co

DATA SHEETSILICON TRANSISTOR2SD2402NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2402 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (MT-200) and symbol Absolute maximum r

Equivalent circuit CBDarlington 2SD2401(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2401 Symbol Conditions 2SD2401 UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V

SMD Type TransistorsNPN Transistors2SD24031.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15721.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD24021.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

isc Silicon NPN Darlington Power Transistor 2SD2401DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1570Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2406DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO