2SD2454 - описание и поиск аналогов

 ..1. Size:43K  no
 2sd2454.pdf 

 ..2. Size:199K  inchange semiconductor
 2sd2454.pdf 

isc Silicon NPN Power Transistor 2SD2454 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.1. Size:37K  panasonic
 2sd2459.pdf 

Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

 8.2. Size:37K  panasonic
 2sd2457.pdf 

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

 8.3. Size:41K  panasonic
 2sd2457 e.pdf 

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

 8.4. Size:41K  panasonic
 2sd2459 e.pdf 

Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4

 8.5. Size:77K  panasonic
 2sd2453.pdf 

Power Transistors 2SD2453 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 For high current transfer ratio and power amplification 2.3 0.1 5.3 0.1 4.35 0.1 0.5 0.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 1.0 0.1 0.1 0.05 0.5 0.1 0.75 0.1 Absolute Maximum Ratings Ta = 25 C 2.3 0.1 (5

 8.6. Size:840K  kexin
 2sd2459.pdf 

SMD Type Transistors NPN Transistors 2SD2459 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V

 8.7. Size:861K  kexin
 2sd2457.pdf 

SMD Type Transistors NPN Transistors 2SD2457 1.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB1599 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt