2SD2454 Datasheet and Replacement

isc Silicon NPN Power Transistor 2SD2454DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4

Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4

Power Transistors2SD2453Silicon NPN triple diffusion planar typeUnit: mm6.50.1For high current transfer ratio and power amplification2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)1.00.10.10.050.50.10.750.1 Absolute Maximum Ratings Ta = 25C2.30.1(5

SMD Type TransistorsNPN Transistors2SD2459SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V

SMD Type TransistorsNPN Transistors2SD24571.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB15990.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt