2SD2579 - Даташиты. Аналоги. Основные параметры

Ordering number 5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2579] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

isc Silicon NPN Power Transistor 2SD2579 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

Ordering number 5794 NPN Triple Diffused Planar Silicon Transistor 2SD2578 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2578] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Uni

isc Silicon NPN Power Transistor 2SD2578 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT