2SD2586 - описание и поиск аналогов

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

isc Silicon NPN Power Transistor 2SD2586 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

Ordering number 5796 NPN Triple Diffused Planar Silicon Transistor 2SD2580 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2580] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

Ordering number 5818 NPN Triple Diffused Planar Silicon Transistor 2SD2581 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2581] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RATI

DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RAT

Darlington 2SD2589 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) External Dimensions FM-25(TO220) (Ta=25 C) Electrical Characteristics Symbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit 0.2 4.8 0.2 10.2 VCBO 110 V ICBO VCB=110V 100max A 0.1 2.0 IEBO

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features Low saturation voltage, high DC current gain. / Applications Audio frequency amplifier and switching applica

isc Silicon NPN Power Transistor 2SD2580 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION High Collector Current-I = 5A C Low Saturation Voltage - V = 0.15V(Max)@ I =1A, I = 50mA CE(sat) C B High DC Current Gain- h = 150 600@ I = 1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications. ABSO

isc Silicon NPN Darlington Power Transistor 2SD2589 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 5mA) CE(sat) C B Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable o

isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage