JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A42 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Vo

A42 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Low Collector-Emitter Saturation Voltage 2. COLLECTOR High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Di

A42(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW Dimensions i

TO-92 Plastic-Encapsulate TransistorsA42 TRANSISTOR (NPN)TO-92TO-92FEATURES TO-92FEATURES TO-92FEATURESFEATURESHigh voltageHigh voltageHigh voltageHigh voltageMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (T =25 unless otherwise noted)MAXIMUM RATINGS (T =25 unless otherwise noted)AA1. E

A42 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LSOT-89-3L Plastic-Encapsulate Transistors Features Complementary to A92 Power Dissipation of 500mW High Breakdown Voltage Low Collector-Emitter Saturation Voltage Mechanical Data SOT-89-3L Small Outline Plastic Package Epoxy UL: 94V-0Marking: A42 Mounting Position: Any

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N-V 40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typconverter applications. The HSBA4204 meet the RoHS and Green Product I 30 A Drequirement, 100% EAS guaranteed with full fu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA42LT1/DHigh Voltage Transistors*MMBTA42LT1NPN SiliconCOLLECTORMMBTA43LT13*Motorola Preferred Device1BASE23

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZTA42T1/DHigh Voltage TransistorPZTA42T1Surface MountMotorola Preferred DeviceNPN SiliconCOLLECTOR 2,4SOT 223 PACKAGEN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA42/DHigh Voltage Transistors*MPSA42NPN SiliconMPSA43*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1M

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA42NPN high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D087PZTA42NPN high-voltage transistorProduct data sheet 1999 May 21Supersedes data of 1997 Jun 16 NXP Semiconductors Product data sheetNPN high-voltage transistor PZTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2,4 collectorAPPLICATIONS3 emitter Tele

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA42NPN high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN high-voltage transistor MMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA42NPN high-voltage transistor1999 Apr 26Product specificationSupersedes data of 1997 Jun 18Philips Semiconductors Product specificationNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087PZTA42NPN high-voltage transistor1999 May 21Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN high-voltage transistor PZTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2,4 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA42NPN high-voltage transistor1999 Apr 22Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186MPSA42; MPSA43NPN high-voltage transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetNPN high-voltage transistors MPSA42; MPSA43FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATIONS3 em

PMBTA42300 V, 100 mA NPN high-voltage transistorRev. 05 12 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PMBTA92.1.2 Features High voltage (max. 300 V)1.3 Applications Telephony and professional communication equipment1.4 Qui

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA42; MPSA43NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN high-voltage transistors MPSA42; MPSA43FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATION

PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:

DISCRETE SEMICONDUCTORS DATA SHEETok, halfpageM3D187PMSTA42; PMSTA43NPN high-voltage transistorsProduct data sheet 1999 May 21Supersedes data of 1997 Jun 19 NXP Semiconductors Product data sheetNPN high-voltage transistors PMSTA42; PMSTA43FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION High voltage (max. 200 V).1 base2 emitterAPPLICATIONS3 c

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D187PMSTA42; PMSTA43NPN high-voltage transistors1999 May 21Product specificationSupersedes data of 1997 Jun 19Philips Semiconductors Product specificationNPN high-voltage transistors PMSTA42; PMSTA43FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION High voltage (max. 200 V).1 base2 emitterAPPLICATION

MMBTA42Small signal NPN transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

STZTA42SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTZTA42 ZTA42 SILICON EPITAXIAL PLANAR NPN HIGHVOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE PNP COMPLEMENTARY TYPE IS2STZTA92 1APPLICATIONS SOT-223 VIDEO AMPLIFIER CIRCUITS (RGBCATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOK

STPSA42SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentSTPSA42 PSA42 TO-92 / BulkSTPSA42-AP PSA42 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN HIGHVOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISSTPSA92TO-92 TO-92APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGBCATH

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

FJA4213Audio Power Amplifier High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJA4313TO-3P11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -230 VVCEO Collector-Emitter Voltage -230 VVEBO Emitter-Ba

January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel

MPSA42 MMBTA42 PZTA42CCEECBC TO-92BSOT-23BSOT-223EMark: 1DNPN High Voltage AmplifierThis device is designed for application as a video output todrive color CRT and other high voltage applications. Sourcedfrom Process 48.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 300 VVCBO Collect

October 2008FJA4210PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage -200 VVCEO Collector-Emitter Voltage -1

August 2009FDMA420NZtmSingle N-Channel 2.5V Specified PowerTrench MOSFET20V, 5.7A, 30m General Description FeaturesThis Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7AFairchild Semiconductors advanced Power Trenchprocess to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0AMicroFET leadframe.

PXTA42300 V, 100 mA NPN high-voltage transistorRev. 5 11 July 2011 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PXTA92.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:

SMBTA 42MNPN Silicon High-Voltage Transistor4 High breakdown voltage Low collector-emitter saturation voltage5 Complementary type: SMBTA 92M (PNP)321VPW05980Type Marking Ordering Code Pin Configuration PackageSMBTA 42M s1D Q62702-A1243 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage VCEO 300 VColl

NPN Silicon High-Voltage Transistors PZTA 42PZTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: PZTA 92, PZTA 93 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZTA 42 PZTA 42 Q62702-Z2035 B C E C SOT-223PZTA 43 PZTA 43 Q62702-Z2036Maximum RatingsParameter Symbol Values UnitPZTA 42 PZTA 43Collect

NPN Silicon Transistors for High Voltages SMBTA 42SMBTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 92, SMBTA 93 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBTA 42 s1D Q68000-A6478 B E C SOT-23SMBTA 43 s1E Q68000-A6482Maximum RatingsParameter Symbol Values UnitSMBTA 42 SMBTA 43Collect

NPN Silicon High Voltage Transistors SXTA 42SXTA 43 High breakdown voltage Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SXTA 42 1D Q68000-A8394 B C E SOT-89SXTA 43 1E Q68000-A8650Maximum RatingsParameter Symbol Values UnitSXTA 42 SXTA 43Collector-emitter voltage VCE0 300 200 VCollector-base voltage VCB

SiA421DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.035 at VGS = - 10 V - 12a- 30 10 nC- Small Footprint Area0.056 at VGS = - 4.5 V - 12a- Low On-Resistance Material categorization:For definitions of compliance please

New ProductSiA427ADJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested- 8 0.026 at VGS = - 1.8 V - 12a 30 nC

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

SiA425EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.065 at VGS = - 3.6 V - 4.5a- 20 4.9 nCSC-70 Package0.080 at VGS = - 2.5 V - 4.5a- Small Footpri

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

New ProductSiA427DJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a- Low On-Resistance- 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate

New ProductSiA426DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS0.0263 at VGS = 4.5 V 20 4.5 7.9 nCCOMPLIANTSC-70 Package0.0361 at VGS = 2.5 V - Small Footprint Area4.5- Low On-Resistanc

CMPTA42 NPNCMPTA92 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARYDESCRIPTION:HIGH VOLTAGEThe CENTRAL SEMICONDUCTOR CMPTA42 and SILICON TRANSISTORSCMPTA92 are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications.MARKING CODES: CMPTA42: C1DCMPTA92: C2DSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL CMPTA

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CMPTA42E NPN CMPTA92E PNPENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPTA42E and HIGH VOLTAGECMPTA92E are Enhanced versions of the CMPTA42 SILICON TRANSISTORSand CMPTA92 complementary surface mount high voltage transistors.MARKING CODES: CMPTA42E: C1DECMPTA92E: C2DEFEATURED ENHANCED SPECIFICATIONS:

Not Recommended for New Design Please Use DZTA42SOT SI I O A A ZTA HI H O TA T A SISTO ISSUE 3 SEPTEMBER 2007 T i I i i TV i Ii i I I T T T T I D T I D VI T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I

A Product Line ofDiodes IncorporatedFMMTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT23 IC = 200mA high Collector Current Case material: molded Plastic. Green molding Compound. 350mW Power dissipation UL Flammability Classification Rating 94V-0 Excellent hFE Characteristics Up To 30mA Moisture Sensi

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. Complementary PNP Type: MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMDTA42 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Ideal for Medium Power Amplification and Switching Dim Min Max Typ Lead Free/RoHS Compliant (Note 3) A 0.35 0.50 0.38 "Green" Device, Note 4 and 5 B CB 1.50 1.70 1.60 Mechanical Data C 2.70 3.00 2.80 Case: SOT-26 D 0.95 Case Ma

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and

NPN SILICON PLANARFXTA42HIGH VOLTAGE TRANSISTORISSUE 1 SEPT 93 T V I V I TI T I i II i i T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T 8 i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II

DZTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 300V Case: SOT223 IC = 500mA High Collector Current Case Material: Molded Plastic. Green Molding Compound. 2W Power Dissipation UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

DXTA42 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Complementary PNP Type Available (DXTA92) Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020C Ideal

MMSTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMSTA92) CDim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 "Green" Device (Note 3 and 4

SXTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 300V Case: SOT89 IC = 500mA High Continuous Current Case Material: Molded Plastic, Green Molding Compound; Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) UL Flammability Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moisture Sensit

PZTA42NPN Silicon High-Voltage Transistors High breakdown voltage43 Low collector-emitter saturation voltage21 Complementary type: PZTA92 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackagePZTA42 PZTA421=B 2=C 3=E 4=C - - SOT223Maximum RatingsParameter Symbol Value Unit300 VCollector-emitter v

SMBTA42/MMBTA42NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage23 Complementary types: 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA42/MMBTA42 s1D SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit300 VCollector-emitter voltage VCEO

VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V

IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3

MCCTM Micro Commercial ComponentsMMSTA4220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Small SignalRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionTransistors Ideal for Medium Power Amplification and Swit

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMBTA42Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon HighRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1

MPSA42MCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPSA43Fax: (818) 701-4939FeaturesNPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1625mW Lead Free Finish/RoHS Compliant

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

PZTA42T1GHigh Voltage TransistorSurface MountNPN Siliconwww.onsemi.comFeatures PZTA42T1G is Complement to PZTA92T1GSOT-223 PACKAGE S Prefix for Automotive and Other Applications Requiring UniqueNPN SILICONSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableHIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

PZTA42T1High Voltage TransistorSurface MountNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-223 PACKAGECompliantNPN SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGS (TC = 25C unless otherwise noted)SURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO 300 Vdc(Open Base)COLLECTOR 2, 4Collector

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

MPSA42, MPSA43High Voltage TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSA43 200EMITTERMPSA42 300Collector-Base Voltage VCBO VdcMPSA43 200MPSA42 300Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 500 mAdcTO

MMBTA42LT1G,MMBTA43LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2Characteristic Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO VdcMMBTA42 300MMBTA43 2003Collector-Base Voltage VCBO VdcMMBTA42 300MMBTA43 200 12Emitter-B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1BASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symbol Value

UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223* High current gain * Complement to UTC PZTA92/93 * Collector power dis

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMA

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 12* Collector-Emitter voltage: VCEO=300V(MMBTA42) SOT-23* Collector-Emitter voltage: VCEO=200V(MMBTA43) (JEDEC TO-236)* High current gain * Coll

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORDESCRIPTION The UTC MPSA42/43 are high voltage transistors,designed for telephone switch and high voltageswitch.FEATURES*Collector-Emitter voltage:1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43)*High current gain*Complement to UTC MPSA92/93TO-92*Collector Dissipation: Pc(max)=625mW1:EMITTER 2:BASE

SMLA42DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 300V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.

SMLA42CSMSILICON NPNHIGH VOLTAGE TRANSISTORMECHANICAL DATADimensions in mm (inches)IN CERAMIC SURFACE MOUNTPACKAGE0.51 0.10(0.02 0.004) 0.31rad.(0.012)321FEATURES1.91 0.10(0.075 0.004)A0.31rad. HIGH BREAKDOWN VOLTAGE(0.012)3.05 0.13(0.12 0.005)1.40 LOW SATURATION VOLTAGES(0.055)1.02 0.10max.A = LOW CAPACITANC

MMBTA42WNPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42W120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10

PZTA42NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone.MillimeterMillimeter REF. REF. A 4 2 Min. Max. Min. Max. Date CodeA 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02

MMBTA42NPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

BCPA42 NPN Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES The BCPA42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. PACKAGE DIMENSIONS SOT-89ACDMillimeter Millimeter REF. REF.Min. Max. Min. Max.A 4.40 4.6

2SBA42 0.2 A, 310 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES The 2SBA42 is designed for applications as a video output 4to drive color CRT, or as a dialer circuit in electronics telephone. 1 23AMARKING ECA42 B DF GPACKAGE INFORMATION H KJ L

MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42SOT-223Formed SMD PackageFor use in Telephony and Professional Communication EquipmentComplementary PZTA92ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 300 VVCEOColle

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42MPSA 43TO-92CBECBEHigh Voltage Transistors.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL MPSA42 MPSA43 UNITCollector -Emitter Voltage VCEO 300 200 VCollector -Base Voltage VCBO 300 200 VEmitter -B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA42CMBTA43SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBTA42 = 1DALL DIMENSIONS IN mmCMBTA43 = 1EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A42 A43Collectorbas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type: PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter Value Unit MARKING: VCBO Collector-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.61.60.5) TOP unit: mm FEATURES Power dissipation PCM : 0.15 W (Ta=25) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment:(i.e. Mobile phone,MP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMSTA42 TRANSISTOR (NPN)SOT-323 FEATURES 1. BASE High Breakdown Voltage2. EMITTER Low Collector-Emitter Saturation Voltage3. COLLECTOR Complementary to MMSTA92(PNP)MARKING:K3M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsMPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER2. BASE3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number Package Pack

SEMICONDUCTOR PZTA42TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESComplementary to PZTA92.KE B1 3JMAXIMUM RATING (Ta=25 )GF FCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 300 VDIM MILLIMETERS1 2 3_A 6.5 + 0.2VCEOCollector-Emitter Voltage 300 VC_B 3.5 + 0.2C 1.8 MAX

SEMICONDUCTOR MMBTA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA92/93._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

SEMICONDUCTOR MPSA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA92/93.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA42 300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50Volta

PNPGeneral purpose External dimensions STA (10-pin)STA421A DElectrical characteristicsAbsolute maximum ratings (Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 60 V ICBO 100 AVCB=60VVCEO 60 V IEBO 100 AVEB=6VVEBO 6V VCEO 60 V IC=25mAIC 3A hFE 40 VCE=4V, IC=1AICP 6 (PW10ms

MMBTA42TRANSISTOR(NPN)FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VI

MMSTA42TRANSISTOR(NPN)SOT-323 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V I

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA42 GMA43MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA42 GMA43 Collector-Emitter VoltageVCEO 300 200 Vdc-

PZTA42 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimet

MMBTA42 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

MMSTA42SOT-323 Transistor (NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Volt

MXTA42NPN Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 300CEO VdcVCBOCollector-Base Voltage 300 VdcEmitter-Base Voltage VEBO5.0 VdcmAdcCollector Current-ContinuousIC 500Thermal CharacteristicsCharacteristics Symbol Max UnitT

PZTA42NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V300VCBOCollector-Base Voltage 300 VVEBOEmitter-Base Voltage 6 VIC(DC)Collector Current (DC) 500 mAPDTotal Device Disspation TA=2

MPSA42General Purpose TransistorsNPN SiliconTO-9211. EMITTER 232. BASE3. COLLECTORMAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 310 VCollector-Emitter Voltage VCEO 305 VEmitter-Base Voltage VEBO 5 VIC Collector Current -Continuous 500 mAJunction and Storage Temperature TJ, Tstg -55-150 Thermal R

MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C

Spec. No. : HE6333HI-SINCERITYIssued Date : 1992.11.18Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA42NPN EPITACIAL PLANAR TRANSISTORDescriptionThe HMPSA42 is high voltage transistor.FeaturesTO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92Absolute Maximum

Spec. No. : HE6848HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA42NPN EPITACIAL PLANAR TRANSISTORDescriptionHigh Voltage TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...............................................................................................................

Analog Power AMA421PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = -4.5V -8.8 Low thermal impedance -2034 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

Analog Power AMA420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 4.5V15.0 Low thermal impedance 2011 @ VGS = 2.5V13.5 Fast switching speed DFN2X2 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA

Analog Power AMA423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)42 @ VGS = -4.5V -6.6 Low thermal impedance-20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-driveDFN2x2-8Typical Applications: Battery Powered Instruments Portable

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MPSA42I(BR3DG42I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features ,,, MPSA92I(BR3CG92I) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA92I(BR3CG92I).

MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications

MPSA42 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features MPSA92 High voltage low saturation, low collector output capacitance, complementary pair with MPSA92.. / Applications

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA92T(BR3CG92T)High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

MPSA42D(BR3DG42D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features ,,, MPSA92D(BR3CG92D) High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).

MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 VCollector Current IC 500 mAPowe

MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter

LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB

LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB

LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA42 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation625mW

SM1A42CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 150m (max.) @ VGS = 10VRDS(ON) = 170m (max.) @ VGS = 4.5VS1G1 P Channel S2G2-100V/-2.2A,Top View of SOP-8RDS(ON) = 205m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 240m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested

SEMICONDUCTOR DWA401~412TECHNICAL DATADWA417,422,423Dual Bias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. Thesedigital transistors are designed to replace

SEMICONDUCTORMMBTA42/43TECHNICAL DATAHigh Voltage TransistorsWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel2 MMBTA42LT3G1D SOT-23 10000/Tape&Reel1 MMBTA43LT1G M1E SOT-23 3000/Tape&ReelSOT-23 10000/Tape&Reel SOT23 MMBTA43LT3G M1

DTA401~411 / DTA417SEMICONDUCTORTECHNICAL DATA DTA422~423Bias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti

SEMICONDUCTORMMBTA42FTECHNICAL DATATRANSISTOR (NPN) MMBTA42FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A42 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

SEMICONDUCTORMPSA42TECHNICAL DATAMPSA42 TRANSISTOR (NPN)B CFEATURES High voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage 300 V M 0.51 MAXVCEO Collector-Emitter Voltage 3

SMD Type TransistorsNPN TransistorsMMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA3 NPN high voltage transistorsCOLLECTOR1BASE1 Base2 Emitter3 Collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

SMD Type TransistorsNPN TransistorsPZTA42 (KZTA42)Unit:mmSOT-2236.500.23.000.14 Features High breakdown voltage Low collector-emitter saturation voltage1 2 3 Complementary to PZTA920.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN Transistors MMBTA42 (KMBTA42)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 High breakdown voltage3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

SMD Type TransistorsNPN TransistorsMMSTA42 (KMSTA42) Features High Breakdown Voltage Low Collector-Emitter Saturation Voltage Complementary to MMSTA921.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 5 Colle

MMBTA42NPN HIGH VOLTAGE TRANSISTOR300 Volt POWER 250 mWattVOLTAGEFEATURES0.120(3.04) NPN silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08)MECH

RATING CHARACTERISTIC CURVES ( CHTA42XGP )THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITRth j-a thermal resistance from junction to ambient note 1 104 K/WNote1. Transistor mounted on an FR4 printed-circuit board.CHARACTERISTICSTamb =25 C unless otherwise specied.SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITICBO collector cut-off current VCB = 200 V - nA100

CHENMKO ENTERPRISE CO.,LTDCHTA42LGPSURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESOT-23* Surface mount package. (SOT-23)* Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.)* PD= 300mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)CO

CHENMKO ENTERPRISE CO.,LTDCHTA42ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SILI

General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)

DC COMPONENTS CO., LTD.DMBTA42DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maxi

DC COMPONENTS CO., LTD.MPSA42MDISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use as a video output to drive colorCRT, or as a dialer circuit in electronic telephone.TO-92Pinning .190(4.83).170(4.33)1 = Emitter2oTyp2 = Base.190(4.83)3 = Collector.170(4.33)2oTyp.500Min(12.70)Absolute Maximum Rati

MPSA42-BKMPSA42-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul

TIP42(3CA42) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP41(3DA41) Features: Complement to TIP41(3DA41). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol Rating UnitTIP42 -40 V -5.0

RUMW UMW MMBTA42SOT-23 Plastic-Encapsulate TransistorsDimensions In Millimeters Dimensions In InchesSymbolMin. Max. Min. Max.A 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.950 TYP. 0.037 TYP.e1 1.800 2.000

MMBTA42 High Voltage NPN TransistorPackage outlineFeatures High voltageSOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0

MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltageSOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3211. BASEMarking: 1D 2.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VCo

MMBTA4 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1DSymbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C

MMBTA42SOT-23 Plastic-Encapsulate TransistorSOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage1. BASE Low collector-emitter saturation voltage2. EMITTER Complementary to MMBTA92 (PNP)3. COLLECTORMarking: 1D PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)

www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl

Jingdao Microelectronics co.LTD MMBTA42MMBTA42SOT-23NPN TRANSISTOR3FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASEParameter Symbol Value Unit2.EMITTER3.COLLECTOR VCBOCollectorBase Vo

SHI KUES PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR2,4 B EMITTER SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value UnitVCollector-Emitter Voltage CEO 300 VCollector-Base Voltage V 300 V CBO Emitter-Base Voltage 6 V 500 mA Collector Current (DC) Po Total Device Disspation T =25 C 2 w Aoc Jun

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltageSOT-23 Complementary to MMBTA92 (PNP)1 BASE 2 EMITTER 3 COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValuealueCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO

MMBTA42 SOT-23 NPN Transistors32 1.Base Features2.Emitter High breakdown voltage1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 300Collector - Emitter Voltage VCEO 300 VEmitter - Base V

MMBTA42 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBTA92 Collector Current: Ic=0.5A High breakdown voltage Low collector-emitter saturation voltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 300 VCollector-Base VoltageVCEO 300 VCollector-Emitter Volta

MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

VBTA4250Nwww.VBsemi.comDual P-Channel -20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected: 1000 V0.65 at VGS = -4.5 V -0.30-20 0.750.84 at VGS = -2.5 V -0.251.20 at VGS = -1.8 V -0.18APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, So

VBA4216www.VBsemi.comDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA

RoHS RoHSCOMPLIANT COMPLIANTMMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

RoHS RoHSCOMPLIANT COMPLIANTMMSTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabili

Certificate TH97/10561QM Certificate TW00/17276EMMPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collectorand MPSA 93 is recommended. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VVCEO Collector-Emitter Voltage 3

FHTA42-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSHigh voltage switchingblow up . PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additional cod

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter VoltageVCEO 300 200 Vdc-Collector-Base VoltageVCBO 300 200 Vdc-Emitter-Base VoltageVEBO 6.0 6.0

MMBTA42NPN GENERAL PURPOSE SWITCHING TRANSISTOR300Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V.Collector current IC=0.3A.ansition frequency fT>50MHz @ TrIC=10mAdc, VCE=20Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

MMBTA42BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A