All Transistors. A42 Equivalents Search

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A42 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Vo... See More ⇒

A42 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Low Collector-Emitter Saturation Voltage 2. COLLECTOR High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Di... See More ⇒

A42(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW Dimensions i... See More ⇒

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) TO-92 TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES FEATURES High voltage High voltage High voltage High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (T =25 unless otherwise noted) MAXIMUM RATINGS (T =25 unless otherwise noted) A A 1. E... See More ⇒

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HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched N- V 40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 11.5 m DS(ON),typ converter applications. The HSBA4204 meet the RoHS and Green Product I 30 A D requirement, 100% EAS guaranteed with full fu... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA42LT1/D High Voltage Transistors * MMBTA42LT1 NPN Silicon COLLECTOR MMBTA43LT1 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol MMBTA42 MMBTA43 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 Emitter Base ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZTA42T1/D High Voltage Transistor PZTA42T1 Surface Mount Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT 223 PACKAGE NPN SILICON BASE HIGH VOLTAGE 1 TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit 1 Collector-Emitter Voltage (Open Base) VCEO 300 Vdc 2 3 Collector-Base V... See More ⇒

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXTA42 NPN high-voltage transistor Product data sheet 2004 Dec 09 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base Teleph... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA42 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1997 Jun 16 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2,4 collector APPLICATIONS 3 emitter Tele... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jun 18 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base ... See More ⇒

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATIONS 3 em... See More ⇒

PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement PMBTA92. 1.2 Features High voltage (max. 300 V) 1.3 Applications Telephony and professional communication equipment 1.4 Qui... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATION... See More ⇒

PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package 1.3 Applications Automotive ... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product data sheet 1999 May 21 Supersedes data of 1997 Jun 19 NXP Semiconductors Product data sheet NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION High voltage (max. 200 V). 1 base 2 emitter APPLICATIONS 3 c... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors 1999 May 21 Product specification Supersedes data of 1997 Jun 19 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION High voltage (max. 200 V). 1 base 2 emitter APPLICATION... See More ⇒

MMBTA42 Small signal NPN transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d... See More ⇒

STZTA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STZTA42 ZTA42 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE PNP COMPLEMENTARY TYPE IS 2 STZTA92 1 APPLICATIONS SOT-223 VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOK ... See More ⇒

STPSA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment STPSA42 PSA42 TO-92 / Bulk STPSA42-AP PSA42 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS STPSA92 TO-92 TO-92 APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGB CATH... See More ⇒

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu... See More ⇒

FJA4213 Audio Power Amplifier High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJA4313 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Ba... See More ⇒

January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A TO-3P High Power Dissipation 130watts 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Excel... See More ⇒

MPSA42 MMBTA42 PZTA42 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 300 V VCBO Collect... See More ⇒

October 2008 FJA4210 PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -1... See More ⇒

August 2009 FDMA420NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m General Description Features This Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7A Fairchild Semiconductor s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0A MicroFET leadframe. ... See More ⇒

PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PXTA92. 1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead... See More ⇒

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package 1.3 Applications Automotive ... See More ⇒

SMBTA 42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type SMBTA 92M (PNP) 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration Package SMBTA 42M s1D Q62702-A1243 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V Coll... See More ⇒

NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types PZTA 92, PZTA 93 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZTA 42 PZTA 42 Q62702-Z2035 B C E C SOT-223 PZTA 43 PZTA 43 Q62702-Z2036 Maximum Ratings Parameter Symbol Values Unit PZTA 42 PZTA 43 Collect... See More ⇒

NPN Silicon Transistors for High Voltages SMBTA 42 SMBTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA 92, SMBTA 93 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBTA 42 s1D Q68000-A6478 B E C SOT-23 SMBTA 43 s1E Q68000-A6482 Maximum Ratings Parameter Symbol Values Unit SMBTA 42 SMBTA 43 Collect... See More ⇒

NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SXTA 42 1D Q68000-A8394 B C E SOT-89 SXTA 43 1E Q68000-A8650 Maximum Ratings Parameter Symbol Values Unit SXTA 42 SXTA 43 Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB... See More ⇒

SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.035 at VGS = - 10 V - 12a - 30 10 nC - Small Footprint Area 0.056 at VGS = - 4.5 V - 12a - Low On-Resistance Material categorization For definitions of compliance please... See More ⇒

New Product SiA427ADJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.016 at VGS = - 4.5 V - 12a - Small Footprint Area 0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested - 8 0.026 at VGS = - 1.8 V - 12a 30 nC ... See More ⇒

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S... See More ⇒

SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.065 at VGS = - 3.6 V - 4.5a - 20 4.9 nC SC-70 Package 0.080 at VGS = - 2.5 V - 4.5a - Small Footpri... See More ⇒

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S... See More ⇒

New Product SiA427DJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.016 at VGS = - 4.5 V - 12a - Small Footprint Area 0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance - 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate... See More ⇒

New Product SiA426DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAK RoHS 0.0263 at VGS = 4.5 V 20 4.5 7.9 nC COMPLIANT SC-70 Package 0.0361 at VGS = 2.5 V - Small Footprint Area 4.5 - Low On-Resistanc... See More ⇒

CMPTA42 NPN CMPTA92 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMPTA42 and SILICON TRANSISTORS CMPTA92 are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications. MARKING CODES CMPTA42 C1D CMPTA92 C2D SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL CMPTA... See More ⇒

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

CMPTA42E NPN CMPTA92E PNP ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPTA42E and HIGH VOLTAGE CMPTA92E are Enhanced versions of the CMPTA42 SILICON TRANSISTORS and CMPTA92 complementary surface mount high voltage transistors. MARKING CODES CMPTA42E C1DE CMPTA92E C2DE FEATURED ENHANCED SPECIFICATIONS ... See More ⇒

Not Recommended for New Design Please Use DZTA42 SOT SI I O A A ZTA HI H O TA T A SISTO ISSUE 3 SEPTEMBER 2007 T i I i i TV i Ii i I I T T T T I D T I D VI T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I ... See More ⇒

A Product Line of Diodes Incorporated FMMTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT23 IC = 200mA high Collector Current Case material molded Plastic. Green molding Compound. 350mW Power dissipation UL Flammability Classification Rating 94V-0 Excellent hFE Characteristics Up To 30mA Moisture Sensi... See More ⇒

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound. Complementary PNP Type MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens... See More ⇒

MMDTA42 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Ideal for Medium Power Amplification and Switching Dim Min Max Typ Lead Free/RoHS Compliant (Note 3) A 0.35 0.50 0.38 "Green" Device, Note 4 and 5 B C B 1.50 1.70 1.60 Mechanical Data C 2.70 3.00 2.80 Case SOT-26 D 0.95 Case Ma... See More ⇒

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and... See More ⇒

NPN SILICON PLANAR FXTA42 HIGH VOLTAGE TRANSISTOR ISSUE 1 SEPT 93 T V I V I TI T I i II i i T E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T 8 i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II ... See More ⇒

DZTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 300V Case SOT223 IC = 500mA High Collector Current Case Material Molded Plastic. Green Molding Compound. 2W Power Dissipation UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat) ... See More ⇒

DXTA42 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT89-3L Complementary PNP Type Available (DXTA92) Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity Level 1 per J-STD-020C Ideal ... See More ⇒

MMSTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMSTA92) C Dim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 "Green" Device (Note 3 and 4... See More ⇒

SXTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 300V Case SOT89 IC = 500mA High Continuous Current Case Material Molded Plastic, Green Molding Compound; Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) UL Flammability Rating 94V-0 Halogen and Antimony Free. Green Device (Note 3) Moisture Sensit... See More ⇒

PZTA42 NPN Silicon High-Voltage Transistors High breakdown voltage 4 3 Low collector-emitter saturation voltage 2 1 Complementary type PZTA92 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package PZTA42 PZTA42 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter v... See More ⇒

SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage 2 3 Complementary types 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA42/MMBTA42 s1D SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage VCEO... See More ⇒

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C, RGE = 1M 300 V E C (TAB) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V... See More ⇒

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 3... See More ⇒

MCC TM Micro Commercial Components MMSTA42 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Small Signal RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Transistors Ideal for Medium Power Amplification and Swit... See More ⇒

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMBTA42 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon High RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1 ... See More ⇒

MPSA42 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 MPSA43 Fax (818) 701-4939 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 625mW Lead Free Finish/RoHS Compliant ... See More ⇒

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb... See More ⇒

PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon www.onsemi.com Features PZTA42T1G is Complement to PZTA92T1G SOT-223 PACKAGE S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS... See More ⇒

PZTA42T1 High Voltage Transistor Surface Mount NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-223 PACKAGE Compliant NPN SILICON HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SURFACE MOUNT Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc (Open Base) COLLECTOR 2, 4 Collector... See More ⇒

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb... See More ⇒

MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSA43 200 EMITTER MPSA42 300 Collector-Base Voltage VCBO Vdc MPSA43 200 MPSA42 300 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc TO... See More ⇒

MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-B... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223 * High current gain * Complement to UTC PZTA92/93 * Collector power dis... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage VCEO=300V * High current gain * Collector Dissipation Pc (max) =350mW Lead-free MMBTA42L Halogen-free MMBTA42G ORDERING INFORMA... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 1 2 * Collector-Emitter voltage VCEO=300V(MMBTA42) SOT-23 * Collector-Emitter voltage VCEO=200V(MMBTA43) (JEDEC TO-236) * High current gain * Coll... See More ⇒

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage 1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93 TO-92 *Collector Dissipation Pc(max)=625mW 1 EMITTER 2 BASE... See More ⇒

SMLA42DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 300V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.... See More ⇒

SMLA42CSM SILICON NPN HIGH VOLTAGE TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) IN CERAMIC SURFACE MOUNT PACKAGE 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 21 FEATURES 1.91 0.10 (0.075 0.004) A 0.31 rad. HIGH BREAKDOWN VOLTAGE (0.012) 3.05 0.13 (0.12 0.005) 1.40 LOW SATURATION VOLTAGES (0.055) 1.02 0.10 max. A = LOW CAPACITANC... See More ⇒

MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10... See More ⇒

PZTA42 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. Millimeter Millimeter REF. REF. A 4 2 Min. Max. Min. Max. Date Code A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02... See More ⇒

MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 ... See More ⇒

BCPA42 NPN Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES The BCPA42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. PACKAGE DIMENSIONS SOT-89 A C D Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.6... See More ⇒

2SBA42 0.2 A, 310 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES The 2SBA42 is designed for applications as a video output 4 to drive color CRT, or as a dialer circuit in electronics telephone. 1 2 3 A MARKING E C A42 B D F G PACKAGE INFORMATION H K J L... See More ⇒

MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector ... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42 SOT-223 Formed SMD Package For use in Telephony and Professional Communication Equipment Complementary PZTA92 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 300 V VCEO Colle... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE C B E High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 MPSA43 UNIT Collector -Emitter Voltage VCEO 300 200 V Collector -Base Voltage VCBO 300 200 V Emitter -B... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS CMBTA42 = 1D ALL DIMENSIONS IN mm CMBTA43 = 1E Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT A42 A43 Collector bas... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter Value Unit MARKING VCBO Collector-... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.6 1.6 0.5) TOP unit mm FEATURES Power dissipation PCM 0.15 W (Ta=25 ) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment (i.e. Mobile phone,MP... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMSTA42 TRANSISTOR (NPN) SOT-323 FEATURES 1. BASE High Breakdown Voltage 2. EMITTER Low Collector-Emitter Saturation Voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING K3M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number Package Pack... See More ⇒

SEMICONDUCTOR PZTA42 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES Complementary to PZTA92. K E B 1 3 J MAXIMUM RATING (Ta=25 ) G F F CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 300 V DIM MILLIMETERS 1 2 3 _ A 6.5 + 0.2 VCEO Collector-Emitter Voltage 300 V C _ B 3.5 + 0.2 C 1.8 MAX... See More ⇒

SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA92/93. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1... See More ⇒

SEMICONDUCTOR MPSA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES Complementary to MPSA92/93. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA42 300 H 0.45 Collector-Base _ VCBO H V J 14.00 + 0.50 Volta... See More ⇒

PNP General purpose External dimensions STA (10-pin) STA421A D Electrical characteristics Absolute maximum ratings (Ta=25 C) (Ta=25 C) Specification Symbol Ratings Unit Symbol Unit Conditions min typ max VCBO 60 V ICBO 100 AVCB= 60V VCEO 60 V IEBO 100 AVEB= 6V VEBO 6V VCEO 60 V IC= 25mA IC 3A hFE 40 VCE= 4V, IC= 1A ICP 6 (PW 10ms... See More ⇒

MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V I... See More ⇒

MMSTA42 TRANSISTOR(NPN) SOT-323 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V I... See More ⇒

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PZTA42 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimet... See More ⇒

MMBTA42 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage... See More ⇒

MMSTA42 SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Volt... See More ⇒

MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 300 CEO Vdc VCBO Collector-Base Voltage 300 Vdc Emitter-Base Voltage VEBO 5.0 Vdc mAdc Collector Current-Continuous IC 500 Thermal Characteristics Characteristics Symbol Max Unit T... See More ⇒

PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 300 VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 500 mA PD Total Device Disspation TA=2... See More ⇒

MPSA42 General Purpose Transistors NPN Silicon TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V Collector-Emitter Voltage VCEO 305 V Emitter-Base Voltage VEBO 5 V IC Collector Current -Continuous 500 mA Junction and Storage Temperature TJ, Tstg -55-150 Thermal R... See More ⇒

MMBTA42 MMBTA43 COLLECTOR High-Voltage NPN Transistor 3 3 Surface Mount 1 1 BASE 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage MMBTA42 300 V V CEO MMBTA43 200 Collector-Base Voltage MMBTA42 300 V V CBO MMBTA43 200 Emitter-Base Voltage MMBTA42 6.0 V EBO V MMBTA43 6.0 C... See More ⇒

Spec. No. HE6333 HI-SINCERITY Issued Date 1992.11.18 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features TO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92 Absolute Maximum... See More ⇒

Spec. No. HE6848 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.08.17 MICROELECTRONICS CORP. Page No. 1/4 HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.................................................................................................................. See More ⇒

Analog Power AMA421P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = -4.5V -8.8 Low thermal impedance -20 34 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS... See More ⇒

Analog Power AMA420N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 9 @ VGS = 4.5V 15.0 Low thermal impedance 20 11 @ VGS = 2.5V 13.5 Fast switching speed DFN2X2 Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA... See More ⇒

Analog Power AMA423P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 42 @ VGS = -4.5V -6.6 Low thermal impedance -20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package 86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-drive DFN2x2-8 Typical Applications Battery Powered Instruments Portable... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector... See More ⇒

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Spec. No. C209A3-H Issued Date 2003.03.18 CYStech Electronics Corp. Revised Date 2013.11.06 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3 Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo... See More ⇒

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units ... See More ⇒

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MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , , MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications ... See More ⇒

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MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , , MMBTA92T(BR3CG92T) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T). ... See More ⇒

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MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 V Collector Current IC 500 mA Powe... See More ⇒

MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter... See More ⇒

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB... See More ⇒

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB... See More ⇒

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB... See More ⇒

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA42 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation 625mW ... See More ⇒

SM1A42CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N Channel D1 D1 D2 100V/2.5A, D2 RDS(ON) = 150m (max.) @ VGS = 10V RDS(ON) = 170m (max.) @ VGS = 4.5V S1 G1 P Channel S2 G2 -100V/-2.2A, Top View of SOP-8 RDS(ON) = 205m (max.) @ VGS =-10V (8) (7) (6) (5) RDS(ON) = 240m (max.) @ VGS =-4.5V D1 D1 D2 D2 100% UIS + Rg Tested ... See More ⇒

SEMICONDUCTOR DWA401 412 TECHNICAL DATA DWA417,422,423 Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace... See More ⇒

SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA High Voltage Transistors We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel 2 MMBTA42LT3G 1D SOT-23 10000/Tape&Reel 1 MMBTA43LT1G M1E SOT-23 3000/Tape&Reel SOT-23 10000/Tape&Reel SOT 23 MMBTA43LT3G M1... See More ⇒

DTA401 411 / DTA417 SEMICONDUCTOR TECHNICAL DATA DTA422 423 Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti... See More ⇒

SEMICONDUCTOR MMBTA42F TECHNICAL DATA TRANSISTOR (NPN) MMBTA42F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A42 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T... See More ⇒

SEMICONDUCTOR MPSA42 TECHNICAL DATA MPSA42 TRANSISTOR (NPN) B C FEATURES High voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Unit _ H J 14.00 0.50 + L 2.30 F F VCBO Collector-Base Voltage 300 V M 0.51 MAX VCEO Collector-Emitter Voltage 3... See More ⇒

SMD Type Transistors NPN Transistors MMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA 3 NPN high voltage transistors COLLECTOR 1 BASE 1 Base 2 Emitter 3 Collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30... See More ⇒

SMD Type Transistors NPN Transistors PZTA42 (KZTA42) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High breakdown voltage Low collector-emitter saturation voltage 1 2 3 Complementary to PZTA92 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit... See More ⇒

SMD Type Transistors NPN Transistors MMBTA42 (KMBTA42) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 High breakdown voltage 3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co... See More ⇒

SMD Type Transistors NPN Transistors MMSTA42 (KMSTA42) Features High Breakdown Voltage Low Collector-Emitter Saturation Voltage Complementary to MMSTA92 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 5 Colle... See More ⇒

MMBTA42 NPN HIGH VOLTAGE TRANSISTOR 300 Volt POWER 250 mWatt VOLTAGE FEATURES 0.120(3.04) NPN silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) MECH... See More ⇒

RATING CHARACTERISTIC CURVES ( CHTA42XGP ) THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 104 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 C unless otherwise speci ed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 200 V - nA 100 ... See More ⇒

CHENMKO ENTERPRISE CO.,LTD CHTA42LGP SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SOT-23 * Surface mount package. (SOT-23) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.) * PD= 300mW (mounted on ceramic substrate). * High saturation current capability. (1) (3) CO... See More ⇒

CHENMKO ENTERPRISE CO.,LTD CHTA42ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 2.0+0.3 3.00+0.10 CONSTRUCTION *NPN SILI... See More ⇒

General Purpose Transistor MMBTA42-G (NPN) RoHS Device Features SOT-23 -High breakdown voltage. 0.119(3.00) 0.110(2.80) -Low collector-emitter saturation voltage. 3 -Ultra small surface mount package. 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10)... See More ⇒

DC COMPONENTS CO., LTD. DMBTA42 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maxi... See More ⇒

DC COMPONENTS CO., LTD. MPSA42M DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2oTyp 2 = Base .190(4.83) 3 = Collector .170(4.33) 2oTyp .500 Min (12.70) Absolute Maximum Rati... See More ⇒

MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul... See More ⇒

TIP42(3CA42) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP41(3DA41) Features Complement to TIP41(3DA41). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP42 -40 V -5.0... See More ⇒

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R UMW UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000... See More ⇒

MMBTA42 High Voltage NPN Transistor Package outline Features High voltage SOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0... See More ⇒

MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3 2 1 1. BASE Marking 1D 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Co... See More ⇒

MMBTA4 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking 1D Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C ... See More ⇒

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MMBTA42 SOT-23 Plastic-Encapsulate Transistor SOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) ... See More ⇒

www.msksemi.com MMBTA42-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP) 1. BASE 2. EMITTER SOT 23 Marking 1D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Coll... See More ⇒

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Jingdao Microelectronics co.LTD MMBTA42 MMBTA42 SOT-23 NPN TRANSISTOR 3 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Parameter Symbol Value Unit 2.EMITTER 3.COLLECTOR VCBO Collector Base Vo... See More ⇒

SHI KUES PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2,4 B EMITTER SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO 300 V Collector-Base Voltage V 300 V CBO Emitter-Base Voltage 6 V 500 mA Collector Current (DC ) Po Total Device Disspation T =25 C 2 w A oc Jun... See More ⇒

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage SOT-23 Complementary to MMBTA92 (PNP) 1 BASE 2 EMITTER 3 COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value alue Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO... See More ⇒

MMBTA42 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter High breakdown voltage 1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base V... See More ⇒

MMBTA42 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBTA92 Collector Current Ic=0.5A High breakdown voltage Low collector-emitter saturation voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 300 V Collector-Base Voltage VCEO 300 V Collector-Emitter Volta... See More ⇒

MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package... See More ⇒

VBTA4250N www.VBsemi.com Dual P-Channel -20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected 1000 V 0.65 at VGS = -4.5 V -0.30 -20 0.75 0.84 at VGS = -2.5 V -0.25 1.20 at VGS = -1.8 V -0.18 APPLICATIONS Load/Power Switching for Portable Devices Drivers Relays, So... See More ⇒

VBA4216 www.VBsemi.com Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICA... See More ⇒

RoHS RoHS COMPLIANT COMPLIANT MMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit... See More ⇒

RoHS RoHS COMPLIANT COMPLIANT MMSTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammabili... See More ⇒

Certificate TH97/10561QM Certificate TW00/17276EM MPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collector and MPSA 93 is recommended. TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO ... See More ⇒

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V VCEO Collector-Emitter Voltage 3... See More ⇒

FHTA42-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS High voltage switching blow up . PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additional cod... See More ⇒

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter Voltage VCEO 300 200 Vdc - Collector-Base Voltage VCBO 300 200 Vdc - Emitter-Base Voltage VEBO 6.0 6.0 ... See More ⇒

MMBTA42 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 300Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V. Collector current IC=0.3A. ansition frequency fT>50MHz @ Tr IC=10mAdc, VCE=20Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol... See More ⇒

MMBTA42 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A... See More ⇒

HMBTA42 NPN-TRANSISTOR NPN, 500mA, 300V NPN HMBTA42 NPN High Voltage Transistor SMD HMBTA42LT1 NPN, BEC High breakdown voltage General Purpose Transistors Low collector-emitter saturation voltage Complementary to HMBTA92 A42 Transistor Polarity NPN MMBTA... See More ⇒