A42 Datasheet, Equivalent, Cross Reference Search
Type Designator: A42
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 310 V
Maximum Collector-Emitter Voltage |Vce|: 305 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
A42 Transistor Equivalent Substitute - Cross-Reference Search
A42 Datasheet (PDF)
a42.pdf
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a42.pdf
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a42.pdf
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a42.pdf
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a42.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
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PZTA42T1GHigh Voltage TransistorSurface MountNPN Siliconwww.onsemi.comFeatures PZTA42T1G is Complement to PZTA92T1GSOT-223 PACKAGE S Prefix for Automotive and Other Applications Requiring UniqueNPN SILICONSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableHIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
pzta42t1.pdf
PZTA42T1High Voltage TransistorSurface MountNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-223 PACKAGECompliantNPN SILICONHIGH VOLTAGE TRANSISTORMAXIMUM RATINGS (TC = 25C unless otherwise noted)SURFACE MOUNTRating Symbol Value UnitCollector-Emitter Voltage VCEO 300 Vdc(Open Base)COLLECTOR 2, 4Collector
mmbta42l smmbta42l mmbta43l.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mpsa42g mpsa42rl1g mpsa42rlrag mpsa42rlrmg mpsa42rlrpg mpsa42zl1g.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
2sa1962rtu 2sa1962otu fja4213rtu fja4213otu.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbta42lt1g.pdf
MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb
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MPSA42, MPSA43High Voltage TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSA43 200EMITTERMPSA42 300Collector-Base Voltage VCBO VdcMPSA43 200MPSA42 300Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 500 mAdcTO
mmbta42lt1 mmbta43lt1.pdf
MMBTA42LT1G,MMBTA43LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2Characteristic Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO VdcMMBTA42 300MMBTA43 2003Collector-Base Voltage VCBO VdcMMBTA42 300MMBTA43 200 12Emitter-B
fja4210.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbta42lt smmbta42l mmbta43l.pdf
MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1BASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symbol Value
pzta43 pzta42.pdf
UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223* High current gain * Complement to UTC PZTA92/93 * Collector power dis
mmbta42.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMA
mmbta42 mmbta43.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 12* Collector-Emitter voltage: VCEO=300V(MMBTA42) SOT-23* Collector-Emitter voltage: VCEO=200V(MMBTA43) (JEDEC TO-236)* High current gain * Coll
mpsa42 mpsa43.pdf
UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORDESCRIPTION The UTC MPSA42/43 are high voltage transistors,designed for telephone switch and high voltageswitch.FEATURES*Collector-Emitter voltage:1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43)*High current gain*Complement to UTC MPSA92/93TO-92*Collector Dissipation: Pc(max)=625mW1:EMITTER 2:BASE
smla42dcsm.pdf
SMLA42DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 300V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.
smla42csm.pdf
SMLA42CSMSILICON NPNHIGH VOLTAGE TRANSISTORMECHANICAL DATADimensions in mm (inches)IN CERAMIC SURFACE MOUNTPACKAGE0.51 0.10(0.02 0.004) 0.31rad.(0.012)321FEATURES1.91 0.10(0.075 0.004)A0.31rad. HIGH BREAKDOWN VOLTAGE(0.012)3.05 0.13(0.12 0.005)1.40 LOW SATURATION VOLTAGES(0.055)1.02 0.10max.A = LOW CAPACITANC
mmbta42w.pdf
MMBTA42WNPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42W120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10
pzta42.pdf
PZTA42NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone.MillimeterMillimeter REF. REF. A 4 2 Min. Max. Min. Max. Date CodeA 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02
mmbta42.pdf
MMBTA42NPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
bcpa42.pdf
BCPA42 NPN Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES The BCPA42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. PACKAGE DIMENSIONS SOT-89ACDMillimeter Millimeter REF. REF.Min. Max. Min. Max.A 4.40 4.6
2sba42.pdf
2SBA42 0.2 A, 310 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES The 2SBA42 is designed for applications as a video output 4to drive color CRT, or as a dialer circuit in electronics telephone. 1 23AMARKING ECA42 B DF GPACKAGE INFORMATION H KJ L
mpsa42.pdf
MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector
pzta42.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42SOT-223Formed SMD PackageFor use in Telephony and Professional Communication EquipmentComplementary PZTA92ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 300 VVCEOColle
mpsa42 43.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42MPSA 43TO-92CBECBEHigh Voltage Transistors.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL MPSA42 MPSA43 UNITCollector -Emitter Voltage VCEO 300 200 VCollector -Base Voltage VCBO 300 200 VEmitter -B
cmbta42 43.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA42CMBTA43SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBTA42 = 1DALL DIMENSIONS IN mmCMBTA43 = 1EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A42 A43Collectorbas
pzta42.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type: PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter Value Unit MARKING: VCBO Collector-
mmbta42.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base
tha42ttd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A (1.61.60.5) TOP unit: mm FEATURES Power dissipation PCM : 0.15 W (Ta=25) B E APPLICATION C 1. BASE High Voltage Amplifier 2. EMITTER For portable equipment:(i.e. Mobile phone,MP
mmsta42.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMSTA42 TRANSISTOR (NPN)SOT-323 FEATURES 1. BASE High Breakdown Voltage2. EMITTER Low Collector-Emitter Saturation Voltage3. COLLECTOR Complementary to MMSTA92(PNP)MARKING:K3M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt
mpsa42.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsMPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER2. BASE3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number Package Pack
pzta42.pdf
SEMICONDUCTOR PZTA42TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESComplementary to PZTA92.KE B1 3JMAXIMUM RATING (Ta=25 )GF FCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 300 VDIM MILLIMETERS1 2 3_A 6.5 + 0.2VCEOCollector-Emitter Voltage 300 VC_B 3.5 + 0.2C 1.8 MAX
mmbta42 mmbta43.pdf
SEMICONDUCTOR MMBTA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA92/93._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1
mpsa42 mpsa43.pdf
SEMICONDUCTOR MPSA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA92/93.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA42 300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50Volta
sta421a.pdf
PNPGeneral purpose External dimensions STA (10-pin)STA421A DElectrical characteristicsAbsolute maximum ratings (Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 60 V ICBO 100 AVCB=60VVCEO 60 V IEBO 100 AVEB=6VVEBO 6V VCEO 60 V IC=25mAIC 3A hFE 40 VCE=4V, IC=1AICP 6 (PW10ms
mmbta42.pdf
MMBTA42TRANSISTOR(NPN)FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VI
mmsta42.pdf
MMSTA42TRANSISTOR(NPN)SOT-323 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V I
mmbta42.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA42 GMA43MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA42 GMA43 Collector-Emitter VoltageVCEO 300 200 Vdc-
pzta42.pdf
PZTA42 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimet
mmbta42.pdf
MMBTA42 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage
mmsta42.pdf
MMSTA42SOT-323 Transistor (NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Volt
mxta42.pdf
MXTA42NPN Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 300CEO VdcVCBOCollector-Base Voltage 300 VdcEmitter-Base Voltage VEBO5.0 VdcmAdcCollector Current-ContinuousIC 500Thermal CharacteristicsCharacteristics Symbol Max UnitT
pzta42.pdf
PZTA42NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V300VCBOCollector-Base Voltage 300 VVEBOEmitter-Base Voltage 6 VIC(DC)Collector Current (DC) 500 mAPDTotal Device Disspation TA=2
mpsa42.pdf
MPSA42General Purpose TransistorsNPN SiliconTO-9211. EMITTER 232. BASE3. COLLECTORMAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 310 VCollector-Emitter Voltage VCEO 305 VEmitter-Base Voltage VEBO 5 VIC Collector Current -Continuous 500 mAJunction and Storage Temperature TJ, Tstg -55-150 Thermal R
mmbta42-43.pdf
MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C
hmpsa42.pdf
Spec. No. : HE6333HI-SINCERITYIssued Date : 1992.11.18Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA42NPN EPITACIAL PLANAR TRANSISTORDescriptionThe HMPSA42 is high voltage transistor.FeaturesTO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92Absolute Maximum
hmbta42.pdf
Spec. No. : HE6848HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA42NPN EPITACIAL PLANAR TRANSISTORDescriptionHigh Voltage TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...............................................................................................................
ama421p.pdf
Analog Power AMA421PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = -4.5V -8.8 Low thermal impedance -2034 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS
ama420n.pdf
Analog Power AMA420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 4.5V15.0 Low thermal impedance 2011 @ VGS = 2.5V13.5 Fast switching speed DFN2X2 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA
ama423p.pdf
Analog Power AMA423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)42 @ VGS = -4.5V -6.6 Low thermal impedance-20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-driveDFN2x2-8Typical Applications: Battery Powered Instruments Portable
mmbta42.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector
mpsa42.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55 to +150
btna42a3.pdf
Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo
mmbta42 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units
mpsa42i.pdf
MPSA42I(BR3DG42I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features ,,, MPSA92I(BR3CG92I) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA92I(BR3CG92I).
mmbta42.pdf
MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications
mpsa42.pdf
MPSA42 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features MPSA92 High voltage low saturation, low collector output capacitance, complementary pair with MPSA92.. / Applications
mmbta42t.pdf
MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA92T(BR3CG92T)High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).
mpsa42d.pdf
MPSA42D(BR3DG42D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features ,,, MPSA92D(BR3CG92D) High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).
mmbta42 mmbta43.pdf
MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 VCollector Current IC 500 mAPowe
mpsa42 mpsa43.pdf
MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter
lmbta42lt1g lmbta42lt3g lmbta43lt1g lmbta43lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta42lt1g lmbta43lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta42lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
ha42.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA42 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation625mW
sm1a42csk.pdf
SM1A42CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 150m (max.) @ VGS = 10VRDS(ON) = 170m (max.) @ VGS = 4.5VS1G1 P Channel S2G2-100V/-2.2A,Top View of SOP-8RDS(ON) = 205m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 240m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested
dwa401-dwa412 dwa417 dwa422 dwa423.pdf
SEMICONDUCTOR DWA401~412TECHNICAL DATADWA417,422,423Dual Bias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. Thesedigital transistors are designed to replace
mmbta42.pdf
SEMICONDUCTORMMBTA42/43TECHNICAL DATAHigh Voltage TransistorsWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel2 MMBTA42LT3G1D SOT-23 10000/Tape&Reel1 MMBTA43LT1G M1E SOT-23 3000/Tape&ReelSOT-23 10000/Tape&Reel SOT23 MMBTA43LT3G M1
dta401-dta411 dta417 dta422-dta423.pdf
DTA401~411 / DTA417SEMICONDUCTORTECHNICAL DATA DTA422~423Bias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti
mmbta42f.pdf
SEMICONDUCTORMMBTA42FTECHNICAL DATATRANSISTOR (NPN) MMBTA42FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A42 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T
mpsa42.pdf
SEMICONDUCTORMPSA42TECHNICAL DATAMPSA42 TRANSISTOR (NPN)B CFEATURES High voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage 300 V M 0.51 MAXVCEO Collector-Emitter Voltage 3
mmbta42w.pdf
SMD Type TransistorsNPN TransistorsMMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA3 NPN high voltage transistorsCOLLECTOR1BASE1 Base2 Emitter3 Collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30
pzta42.pdf
SMD Type TransistorsNPN TransistorsPZTA42 (KZTA42)Unit:mmSOT-2236.500.23.000.14 Features High breakdown voltage Low collector-emitter saturation voltage1 2 3 Complementary to PZTA920.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
mmbta42.pdf
SMD Type TransistorsNPN Transistors MMBTA42 (KMBTA42)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 High breakdown voltage3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co
mmsta42.pdf
SMD Type TransistorsNPN TransistorsMMSTA42 (KMSTA42) Features High Breakdown Voltage Low Collector-Emitter Saturation Voltage Complementary to MMSTA921.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 5 Colle
mmbta42.pdf
MMBTA42NPN HIGH VOLTAGE TRANSISTOR300 Volt POWER 250 mWattVOLTAGEFEATURES0.120(3.04) NPN silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08)MECH
chta42xgp.pdf
RATING CHARACTERISTIC CURVES ( CHTA42XGP )THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITRth j-a thermal resistance from junction to ambient note 1 104 K/WNote1. Transistor mounted on an FR4 printed-circuit board.CHARACTERISTICSTamb =25 C unless otherwise specied.SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITICBO collector cut-off current VCB = 200 V - nA100
chta42lgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHTA42LGPSURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESOT-23* Surface mount package. (SOT-23)* Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.)* PD= 300mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)CO
chta42zgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHTA42ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SILI
mmbta42-g.pdf
General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)
dmbta42.pdf
DC COMPONENTS CO., LTD.DMBTA42DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maxi
mpsa42m.pdf
DC COMPONENTS CO., LTD.MPSA42MDISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use as a video output to drive colorCRT, or as a dialer circuit in electronic telephone.TO-92Pinning .190(4.83).170(4.33)1 = Emitter2oTyp2 = Base.190(4.83)3 = Collector.170(4.33)2oTyp.500Min(12.70)Absolute Maximum Rati
mpsa42-bk.pdf
MPSA42-BKMPSA42-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul
tip42 3ca42.pdf
TIP42(3CA42) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP41(3DA41) Features: Complement to TIP41(3DA41). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol Rating UnitTIP42 -40 V -5.0
mmbta42.pdf
RUMW UMW MMBTA42SOT-23 Plastic-Encapsulate TransistorsDimensions In Millimeters Dimensions In InchesSymbolMin. Max. Min. Max.A 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.950 TYP. 0.037 TYP.e1 1.800 2.000
mmbta42.pdf
MMBTA42 High Voltage NPN TransistorPackage outlineFeatures High voltageSOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0
mmbta42.pdf
MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltageSOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3211. BASEMarking: 1D 2.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VCo
mmbta42.pdf
MMBTA4 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1DSymbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C
tmpt5551 tmpt6427 tmpt6428 tmpt6429 tmpta05 tmpta06 tmpta12 tmpta13 tmpta14 tmpta20 tmpta42 tmpta43.pdf
mmbta42.pdf
MMBTA42SOT-23 Plastic-Encapsulate TransistorSOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage1. BASE Low collector-emitter saturation voltage2. EMITTER Complementary to MMBTA92 (PNP)3. COLLECTORMarking: 1D PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)
mmbta42-ms.pdf
www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl
mmbta42.pdf
Jingdao Microelectronics co.LTD MMBTA42MMBTA42SOT-23NPN TRANSISTOR3FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASEParameter Symbol Value Unit2.EMITTER3.COLLECTOR VCBOCollectorBase Vo
pzta42.pdf
SHI KUES PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR2,4 B EMITTER SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value UnitVCollector-Emitter Voltage CEO 300 VCollector-Base Voltage V 300 V CBO Emitter-Base Voltage 6 V 500 mA Collector Current (DC) Po Total Device Disspation T =25 C 2 w Aoc Jun
mmbta42.pdf
MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltageSOT-23 Complementary to MMBTA92 (PNP)1 BASE 2 EMITTER 3 COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValuealueCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO
mmbta42 mmbta42-l.pdf
MMBTA42 SOT-23 NPN Transistors32 1.Base Features2.Emitter High breakdown voltage1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 300Collector - Emitter Voltage VCEO 300 VEmitter - Base V
mmbta42l.pdf
MMBTA42 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBTA92 Collector Current: Ic=0.5A High breakdown voltage Low collector-emitter saturation voltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 300 VCollector-Base VoltageVCEO 300 VCollector-Emitter Volta
mmbta42.pdf
MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
vbta4250n.pdf
VBTA4250Nwww.VBsemi.comDual P-Channel -20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected: 1000 V0.65 at VGS = -4.5 V -0.30-20 0.750.84 at VGS = -2.5 V -0.251.20 at VGS = -1.8 V -0.18APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, So
vba4216.pdf
VBA4216www.VBsemi.comDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA
mmbta42.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit
mmsta42.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMSTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabili
mpsa42.pdf
Certificate TH97/10561QM Certificate TW00/17276EMMPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collectorand MPSA 93 is recommended. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO
mmbta42.pdf
SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VVCEO Collector-Emitter Voltage 3
fhta42-me.pdf
FHTA42-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSHigh voltage switchingblow up . PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additional cod
mmbta42 mmbta43.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter VoltageVCEO 300 200 Vdc-Collector-Base VoltageVCBO 300 200 Vdc-Emitter-Base VoltageVEBO 6.0 6.0
mmbta42.pdf
MMBTA42NPN GENERAL PURPOSE SWITCHING TRANSISTOR300Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V.Collector current IC=0.3A.ansition frequency fT>50MHz @ TrIC=10mAdc, VCE=20Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol
mmbta42.pdf
MMBTA42BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A
hmbta42.pdf
HMBTA42NPN-TRANSISTORNPN, 500mA, 300V NPN HMBTA42NPN High Voltage Transistor SMDHMBTA42LT1NPN, BECHigh breakdown voltageGeneral Purpose TransistorsLow collector-emitter saturation voltageComplementary to HMBTA92A42Transistor Polarity: NPNMMBTA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .