Справочник транзисторов. C1815

 

Биполярный транзистор C1815 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: C1815

Маркировка: HF

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.15 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 80 MHz

Статический коэффициент передачи тока (hfe): 130

Корпус транзистора: SOT23

Аналоги (замена) для C1815

 

 

C1815 Datasheet (PDF)

0.1. 2pc1815.pdf Size:50K _philips

C1815
C1815

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistorProduct specification 2004 Nov 05Supersedes data of 1999 May 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

0.2. 2pc1815 3.pdf Size:47K _philips

C1815
C1815

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Mar 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

 0.3. 2sc1815-t.pdf Size:213K _toshiba

C1815
C1815

0.4. 2sc1815l.pdf Size:308K _toshiba

C1815
C1815

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

 0.5. 2sc1815.pdf Size:272K _toshiba

C1815
C1815

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

0.6. ksc1815.pdf Size:44K _fairchild_semi

C1815
C1815

KSC1815Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50VTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

0.7. 2sc1815-bl-gr-o-y.pdf Size:368K _mcc

C1815
C1815

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

0.8. 2sc1815.pdf Size:227K _utc

C1815
C1815

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

0.9. c1815.pdf Size:174K _secos

C1815
C1815

C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE ALPower Dissipation 33Top View C B11 22K ECollector MARKING: HF 3 DH JF G1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B

0.10. c1815t.pdf Size:393K _secos

C1815
C1815

C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation EmitterCLASSIFICATION OF hFE (1) J CollectorBase A DProduct-Rank C1815T-O C1815T-Y C1815T-GRMillimeterREF. BMin. Max.Range 70~140 120~240 200~400A 4.40

0.11. csc1815.pdf Size:247K _cdil

C1815
C1815

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier Applications.Complementary CSA1015ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage

0.12. ktc1815.pdf Size:803K _kec

C1815
C1815

SEMICONDUCTOR KTC1815TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1015. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base

0.13. 2sc1815-m.pdf Size:168K _microelectronics

C1815
C1815

0.14. c1815.pdf Size:830K _htsemi

C1815
C1815

C1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj

0.15. c1815 sot-23.pdf Size:218K _lge

C1815
C1815

C1815 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150

0.16. c1815 to-92.pdf Size:180K _lge

C1815
C1815

C1815 Transistor(NPN)TO-921.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage Dimensions in inches and (millimeters)IC Collector Current -Continuous 150 mA PC Collector Power Dissi

0.17. c1815.pdf Size:291K _wietron

C1815
C1815

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-FreeTO92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage 1 2 3 VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total D

0.18. c1815lt1.pdf Size:230K _wietron

C1815
C1815

C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * G Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless other

0.19. c1815.pdf Size:477K _willas

C1815
C1815

FM120-MWILLASTHRU 1 15 SOT-23 Plastic-Encap sulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better revSOD-123HSOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. Low profi e surface mounted appl

0.20. hsc1815.pdf Size:46K _hsmc

C1815
C1815

Spec. No. : HE6523HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/4HSC1815NPN Epitaxial Planar TransistorDescriptionThe HSC1815 is designed for use in driver stage of AF amplifier general purposeamplification. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.........................................

0.21. c1815.pdf Size:849K _shenzhen

C1815
C1815

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) TO92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value UnitsVCBO -60 VCollector-Base Voltage 1 2 3 VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage

0.22. 2sc1815.pdf Size:544K _shenzhen

C1815
C1815

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

0.23. c1815.pdf Size:433K _can-sheng

C1815
C1815

SOT-23 Plastic Encapsulate TransistorsSOT-FEATURES23Power dissipationMARKING :MARKING :MARKING : C1815=HFMARKING :1 BASE2 EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS3 COLLECTOSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units

0.24. c1815 sot-23.pdf Size:284K _can-sheng

C1815
C1815

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) FEATURES Power dissipation MARKING:HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

0.25. 2sc1815m.pdf Size:729K _blue-rocket-elect

C1815
C1815

2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, h , FEHigh voltage and high current, excellent hFE linearity ,low noise. / Applications ,

0.26. ftc1815.pdf Size:268K _first_silicon

C1815
C1815

SEMICONDUCTORFTC1815TECHNICAL DATA FEATURES B CGeneral Purpose NPN Transistor DIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage 60 V G 0.85H 0.45_VCEO Collector-Emitter Voltage 50 V HJ 14.00 + 0.50L 2.30F FVEBO Emitter-Ba

0.27. 2sc1815.pdf Size:959K _kexin

C1815
C1815

SMD Type orSMD Type TransistICsNPN Transistors2SC1815SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesPower dissipation 1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 VEmitter to Base Voltage VEBO 5

0.28. 2sc1815lt1.pdf Size:122K _hfzt

C1815

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25* PD 225 mWNO

0.29. c1815.pdf Size:95K _sunroc

C1815

SUNROCSOT-23 C1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200

0.30. 2sc1815.pdf Size:175K _inchange_semiconductor

C1815
C1815

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1815DESCRIPTIONHigh Voltage and High CurrentVceo=50V(Min.Ic=150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SA1015(O,Y,GR class)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver sta

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