MBT3946DW - описание и поиск аналогов

MBT3946DW Dual General Purpose Transistor 2 1 3 6 5 4 NPN+PNP Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Value Unit Symbol Collector-Emitter Voltage V Vdc CEO (NPN) 40 -40 (PNP) VCBO Vdc Collector-Base Voltage 60 (NPN) -40 (PNP) VEBO Vdc Emitter-Base VOltage 6.0 (NPN) -5.0 (PNP) IC mAdc Collector Current-Continuous 200 (NPN) -200 (P

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 http //onsemi.com surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount (3) (2) (1) applications

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

FM120-M WILLAS MMBT3946DW1T1 THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TheM

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

MMBT3946DW Descriptions Silicon PNP and NPN transistor in a SOT-363 Plastic Package. Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 9

MMBT3946DW SOT-363 NPN / PNP Silicon Epitaxial Planar Transistors 6 5 4 Q2 Q1 1 2 3 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector Simplified outline(SOT-363) Q1 Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Q2 Maximum Ratin