MBT3946DW Datasheet and Replacement

MBT3946DWDual General Purpose Transistor 2 13654NPN+PNP Silicon12345 6SOT-363(SC-88)NPN+PNPMaximum RatingsRating Value UnitSymbolCollector-Emitter Voltage V VdcCEO(NPN) 40-40(PNP)VCBO VdcCollector-Base Voltage60(NPN)-40(PNP)VEBO VdcEmitter-Base VOltage6.0(NPN)-5.0(PNP)IC mAdcCollector Current-Continuous 200(NPN)-200(P

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount

FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM

LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS

LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS

MMBT3946DWDescriptionsSilicon PNP and NPN transistor in a SOT-363 Plastic Package.Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 9

MMBT3946DW SOT-363 NPN / PNP Silicon Epitaxial Planar Transistors6 5 4Q2Q11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. Collector Simplified outline(SOT-363)Q1 Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAQ2 Maximum Ratin