MBT3946DW
Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT3946DW
SMD Transistor Code: 46
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 4(4.5)
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SOT-363
MBT3946DW
Transistor Equivalent Substitute - Cross-Reference Search
MBT3946DW
Datasheet (PDF)
..1. Size:358K wietron
mbt3946dw.pdf
MBT3946DWDual General Purpose Transistor 2 13654NPN+PNP Silicon12345 6SOT-363(SC-88)NPN+PNPMaximum RatingsRating Value UnitSymbolCollector-Emitter Voltage V VdcCEO(NPN) 40-40(PNP)VCBO VdcCollector-Base Voltage60(NPN)-40(PNP)VEBO VdcEmitter-Base VOltage6.0(NPN)-5.0(PNP)IC mAdcCollector Current-Continuous 200(NPN)-200(P
0.1. Size:174K onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf
MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
0.2. Size:241K onsemi
mbt3946dw1t1-d.pdf
MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications
0.3. Size:169K onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf
MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
0.4. Size:174K onsemi
mbt3946dw1t2g.pdf
MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
0.5. Size:397K willas
mmbt3946dw1t1.pdf
FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM
0.6. Size:664K lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf
LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS
0.7. Size:664K lrc
lmbt3946dw1t1g.pdf
LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS
0.8. Size:3385K cn shikues
mmbt3946dw.pdf
MMBT3946DWDescriptionsSilicon PNP and NPN transistor in a SOT-363 Plastic Package.Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 9
0.9. Size:513K cn yfw
mmbt3946dw.pdf
MMBT3946DW SOT-363 NPN / PNP Silicon Epitaxial Planar Transistors6 5 4Q2Q11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. Collector Simplified outline(SOT-363)Q1 Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAQ2 Maximum Ratin
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