MUN5215DW datasheet, аналоги, основные параметры

Наименование производителя: MUN5215DW  📄📄 

Маркировка: 7E

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 10 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.187 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 160

Корпус транзистора: SOT363

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MUN5215DW даташит

 0.1. Size:89K  onsemi
 nsvmun5215dw1t1g.pdf pdf_icon

MUN5215DW

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 0.2. Size:191K  onsemi
 mun5211dw1t1g mun5212dw1t1g mun5213dw1t1g mun5214dw1t1g mun5215dw1t1g mun5216dw1t1g mun5230dw1t1g mun5231dw1t1g.pdf pdf_icon

MUN5215DW

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The

 0.3. Size:207K  lrc
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MUN5215DW

LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor

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