SEMICONDUCTOR KTA1807D/LTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH VOLTAGE SWITCHING.POWER SUPPLY SWITCHING FOR TELEPHONES.AI FEATURESC JHigh Voltage : VCEO=-600V.DIM MILLIMETERS_High Speed Switching Time. A 6.60 + 0.2_B 6.10 + 0.2: tf 1.0 s (IC=-0.5A)_C 5.0 + 0.2_D 1.10 + 0.2Low Collector Emitter Saturation Voltage. _E 2.70 + 0.2_F 2.30 +

SEMICONDUCTOR KTA1807D/LTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH VOLTAGE SWITCHING.POWER SUPPLY SWITCHING FOR TELEPHONES.AI FEATURESC JHigh Voltage : VCEO=-600V.DIM MILLIMETERS_High Speed Switching Time. A 6.60 + 0.2_B 6.10 + 0.2: tf 1.0 s (IC=-0.5A)_C 5.0 + 0.2_D 1.10 + 0.2Low Collector Emitter Saturation Voltage. _E 2.70 + 0.2_F 2.30 +

SEMICONDUCTOR KTA1834D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURESLow Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) AI C JLarge Collector CurrentDIM MILLIMETERS_A 6.60 + 0.2: IC=-10A(dc) IC=-15A(10ms, single pulse)_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTC5001D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1

SEMICONDUCTOR KTA1862D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES.A I C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2High Breakdown Voltage, Typically : BVCEO=-400V. _B 6.10 + 0.2_C 5.0 + 0.2_D 1.10 + 0.2Low Collector Saturation Voltage. _E 2.70 + 0.2_F 2.30 + 0.1: VCE(sat)=-0.5V(Max.) at (

SEMICONDUCTOR KTA1837TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORPOWER AMPLIFIER APPLICATIONS.DRIVER STAGE AMPLIFIER APPLICATINS.ACDIM MILLIMETERSSFEATURES_A 10.0 + 0.3_+B 15.0 0.3EHigh Transition Frequency : fT=70MHz(Typ.)C _2.70 0.3+D 0.76+0.09/-0.05Complementary Pair with KTC4793._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05