KTA1807D Todos los transistores

SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I FEATURES C J High Voltage VCEO=-600V. DIM MILLIMETERS _ High Speed Switching Time. A 6.60 + 0.2 _ B 6.10 + 0.2 tf 1.0 s (IC=-0.5A) _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 +

SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I FEATURES C J High Voltage VCEO=-600V. DIM MILLIMETERS _ High Speed Switching Time. A 6.60 + 0.2 _ B 6.10 + 0.2 tf 1.0 s (IC=-0.5A) _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 +

SEMICONDUCTOR KTA1834D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Collector Saturation Voltage. VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) A I C J Large Collector Current DIM MILLIMETERS _ A 6.60 + 0.2 IC=-10A(dc) IC=-15A(10ms, single pulse) _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC5001D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1

SEMICONDUCTOR KTA1862D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 High Breakdown Voltage, Typically BVCEO=-400V. _ B 6.10 + 0.2 _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 + 0.1 VCE(sat)=-0.5V(Max.) at (

SEMICONDUCTOR KTA1837 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A C DIM MILLIMETERS S FEATURES _ A 10.0 + 0.3 _ + B 15.0 0.3 E High Transition Frequency fT=70MHz(Typ.) C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary Pair with KTC4793. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05