Биполярный транзистор KTC812E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC812E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TES6
KTC812E Datasheet (PDF)
ktc812e.pdf
SEMICONDUCTOR KTC812ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
ktc812u.pdf
SEMICONDUCTOR KTC812UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
ktc812t.pdf
SEMICONDUCTORKTC812TTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES EK B KHigh Emitter-Base Voltage : VEBO=25V(Min.)DIM MILLIMETERSHigh Reverse hFE _A 2.9 + 0.216B 1.6+0.2/-0.1: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 + 0.052 5_+D 0.4 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)E 2.8+0.2/-0.3_F 1.9
ktc811e.pdf
SEMICONDUCTOR KTC811ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
ktc811u.pdf
SEMICONDUCTOR KTC811UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
ktc814u.pdf
SEMICONDUCTORKTC814UTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES BHigh Emitter-Base Voltage : VEBO=25V(Min.)B1High Reverse hFEDIM MILLIMETERS1 6_: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A 2.00 + 0.20_2 5 A1 1.3 + 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.1
ktc813u.pdf
SEMICONDUCTOR KTC813UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORTV TUNER, UHF OSCILLATOR APPLICATION.(COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION.B(COMMON BASE) B1DIM MILLIMETERS1 6_FEATURES A 2.00 + 0.20_2 5 A1 1.3 + 0.1High Transition Frequency : fT=1500MHz (Typ.)._B 2.1 + 0.13 4 D _B1 1.25 + 0.1Excellent hFE Linearity. C 0.65D 0.2+0.10/-0.05
ktc815.pdf
SEMICONDUCTOR KTC815TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY AMPLIFIERB CFEATURESCollector-Base Voltage : VCBO=60V.Complementary to KTA539.DIM MILLIMETERSN A 4.70 MAXB 4.80 MAXEKG C 3.70 MAXD 0.45DE 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=25 )_J 14.00 + 0.50HK 0.55 MAXCHARACTERISTIC SYMBOL RATING UNITF F L 2.30M 0.45 MAXV
ktc811t.pdf
SEMICONDUCTOR KTC811TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EK B KFEATURES DIM MILLIMETERSExcellent hFE Linearity _A 2.9 + 0.216B 1.6+0.2/-0.1: hFE(2)=25(Min.) at VCE=6V, IC=400mA._C 0.70 + 0.052 5_+D 0.4 0.1Complementary to KTA711T.E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 + 0.05I 0
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050