KTC812E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTC812E  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TES6

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KTC812E datasheet

 ..1. Size:42K  kec
ktc812e.pdf pdf_icon

KTC812E

SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri

 8.1. Size:43K  kec
ktc812u.pdf pdf_icon

KTC812E

SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. DIM MILLIMETERS 1 6 _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwing char

 8.2. Size:49K  kec
ktc812t.pdf pdf_icon

KTC812E

SEMICONDUCTOR KTC812T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES E K B K High Emitter-Base Voltage VEBO=25V(Min.) DIM MILLIMETERS High Reverse hFE _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _ C 0.70 + 0.05 2 5 _ + D 0.4 0.1 Low on Resistance RON=1 (Typ.), (IB=5mA) E 2.8+0.2/-0.3 _ F 1.9

 9.1. Size:43K  kec
ktc811e.pdf pdf_icon

KTC812E

SEMICONDUCTOR KTC811E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri

Otros transistores... KTC801E, KTC801F, KTC801U, KTC802E, KTC8050S, KTC811E, KTC811T, KTC811U, 2SC828, KTC812U, KTC813U, KTC815, KTC8550S, KTC9011S, KTC9012S, KTC9013S, KTC9014S