KTC812E Todos los transistores

SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri

SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. DIM MILLIMETERS 1 6 _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwing char

SEMICONDUCTOR KTC812T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES E K B K High Emitter-Base Voltage VEBO=25V(Min.) DIM MILLIMETERS High Reverse hFE _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _ C 0.70 + 0.05 2 5 _ + D 0.4 0.1 Low on Resistance RON=1 (Typ.), (IB=5mA) E 2.8+0.2/-0.3 _ F 1.9

SEMICONDUCTOR KTC811E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 DIM MILLIMETERS Excellent temperature response between these 2 transistor. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 High pairing property in hFE. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 The follwing characteri

SEMICONDUCTOR KTC811U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES B1 A super-minimold package houses 2 transistor. DIM MILLIMETERS 1 6 _ Excellent temperature response between these 2 transistor. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 High pairing property in hFE. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 The follwing char

SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B High Emitter-Base Voltage VEBO=25V(Min.) B1 High Reverse hFE DIM MILLIMETERS 1 6 _ Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Low on Resistance RON=1 (Typ.), (IB=5mA) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0.1

SEMICONDUCTOR KTC813U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. (COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION. B (COMMON BASE) B1 DIM MILLIMETERS 1 6 _ FEATURES A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 High Transition Frequency fT=1500MHz (Typ.). _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Excellent hFE Linearity. C 0.65 D 0.2+0.10/-0.05

SEMICONDUCTOR KTC815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY AMPLIFIER B C FEATURES Collector-Base Voltage VCBO=60V. Complementary to KTA539. DIM MILLIMETERS N A 4.70 MAX B 4.80 MAX E K G C 3.70 MAX D 0.45 D E 1.00 F 1.27 G 0.85 H 0.45 MAXIMUM RATING (Ta=25 ) _ J 14.00 + 0.50 H K 0.55 MAX CHARACTERISTIC SYMBOL RATING UNIT F F L 2.30 M 0.45 MAX V

SEMICONDUCTOR KTC811T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E K B K FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.9 + 0.2 16 B 1.6+0.2/-0.1 hFE(2)=25(Min.) at VCE=6V, IC=400mA. _ C 0.70 + 0.05 2 5 _ + D 0.4 0.1 Complementary to KTA711T. E 2.8+0.2/-0.3 _ F 1.9 + 0.2 3 4 G 0.95 _ H 0.16 + 0.05 I 0