KTD1863 - описание и поиск аналогов

SEMICONDUCTOR KTD1863 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURES High Breakdown Voltage and High Current VCEO=80V, IC=1A. DIM MILLIMETERS P Low VCE(sat) DEPTH 0.2 A 7.20 MAX Complementary to KTB1241. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _ MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50

KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 CLASSIFICATION OF hFE(1) B C A E E C Product-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70 140 120 240 200 400 B D Marking ZO ZY ZG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEB

SEMICONDUCTOR KTD1824 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR LOW-FREQUENCY AMPLIFICATION. FEATURES E High foward current transfer ratio hFE. M B M DIM MILLIMETERS Low collector to emitter saturation voltage VCE(sat). _ A + 2.00 0.20 D 2 High emitter to base voltage VEBO. _ + B 1.25 0.15 _ + C 0.90 0.10 Low noise voltage NV. 3 1 D 0.3+0.10/-0.05 _

SEMICONDUCTOR KTD1824E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR LOW-FREQUENCY AMPLIFICATION. FEATURES E High foward current transfer ratio hFE. B Low collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS _ + A 1.60 0.10 D High emitter to base voltage VEBO. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low noise voltage NV. 3 1 D 0.27+0.10/-0.05 _ ESM type packa

SEMICONDUCTOR KTD1854T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER APPLICATIONS. FEATURES E B AF amplifier, solenoid drivers, LED drivers. K DIM MILLIMETERS Darlington connection. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High DC current gain. _ C 0.70 + 0.05 2 3 Very small-sized package permitting sets to be made _ D 0.4 + 0.1 E 2.8+0.2/-0.3 smaller and slimer. _ F 1.9 + 0

SEMICONDUCTOR KTD1882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING B C FEATURES Complementary to KTB1772. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 40 V K 0.5

SEMICONDUCTOR KTD1898 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTB1260. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

KTD1898 SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW

KTD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER (Ta=25 ) ABSOLUTE MAXIMUM RATINGS C Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Temperat

SMD Type Transistors NPN Transistors KTD1898 1.70 0.1 Features Small Flat Package General Purpose Application 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC