KTD1863 Datasheet and Replacement

SEMICONDUCTOR KTD1863TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.B DFEATURESHigh Breakdown Voltage and High Current: VCEO=80V, IC=1A.DIM MILLIMETERSPLow VCE(sat)DEPTH:0.2A 7.20 MAXComplementary to KTB1241. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50

KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 123CLASSIFICATION OF hFE(1) B C AE ECProduct-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70~140 120~240 200~400 B DMarking ZO ZY ZG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEB

SEMICONDUCTOR KTD1824TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR LOW-FREQUENCY AMPLIFICATION.FEATURES EHigh foward current transfer ratio hFE.M B MDIM MILLIMETERSLow collector to emitter saturation voltage VCE(sat)._A+2.00 0.20D2High emitter to base voltage VEBO._+B 1.25 0.15_+C 0.90 0.10Low noise voltage NV.31D 0.3+0.10/-0.05_

SEMICONDUCTOR KTD1824ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR LOW-FREQUENCY AMPLIFICATION.FEATURES EHigh foward current transfer ratio hFE.BLow collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS_+A 1.60 0.10DHigh emitter to base voltage VEBO. _+2 B 0.85 0.10_+C 0.70 0.10Low noise voltage NV.31D 0.27+0.10/-0.05_ESM type packa

SEMICONDUCTOR KTD1854TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER APPLICATIONS.FEATURES EBAF amplifier, solenoid drivers, LED drivers. KDIM MILLIMETERSDarlington connection._A 2.9 + 0.2B 1.6+0.2/-0.1High DC current gain._C 0.70 + 0.0523Very small-sized package permitting sets to be made_D 0.4 + 0.1E 2.8+0.2/-0.3smaller and slimer._F 1.9 + 0

SEMICONDUCTOR KTD1882TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGB CFEATURES Complementary to KTB1772.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 40 V K 0.5

SEMICONDUCTOR KTD1898TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTB1260. DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40

KTD1898SOT-89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package2. COLLECTOR General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW

KTD1898Epitaxial Planar NPN TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTER(Ta=25 )ABSOLUTE MAXIMUM RATINGS CRating SymbolLimits UnitVdcCollector-Base VoltageV 100CBOVdcCollector-Emitter Voltage 80VCEOVdcEmitter-Base Voltage 5VEBOIC A(DC)1Collector CurrentICP 2 A (Pulse)*PC 0.5 WCollector Power DissipationT , TstgCJunction Temperat

SMD Type TransistorsNPN TransistorsKTD18981.70 0.1 Features Small Flat Package General Purpose Application0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC