MJD117L. Аналоги и основные параметры
Наименование производителя: MJD117L
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 25 MHz
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hFE): 1000
Корпус транзистора: IPAK
Аналоги (замена) для MJD117L
- подборⓘ биполярного транзистора по параметрам
MJD117L даташит
8.1. Size:306K motorola
mjd112 mjd117.pdf 
Order this document MOTOROLA by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD112 Complementary Darlington PNP MJD117* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, converters, and power amplifiers. POWER TRANS
8.3. Size:52K fairchild semi
mjd117.pdf 
MJD117 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP117 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted
8.4. Size:153K onsemi
njvmjd112 njvmjd117.pdf 
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas
8.5. Size:224K onsemi
mjd117rlg.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.6. Size:224K onsemi
mjd117t4g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.7. Size:224K onsemi
mjd117-1g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.8. Size:224K onsemi
mjd117g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.9. Size:84K cdil
mjd112 mjd117.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO 100 Collector Base Voltage V VCEO 100 Collector Emitter Voltage V E
8.10. Size:1078K jiangsu
mjd117.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP117 2. COLLECTOR 2 1 3 3. EMITTER MJD117=Device code Solid dot=Green moldinn compound device, if none,the normal device MJD117 XXXX=Code XXXX MAXIMUM RATINGS
8.11. Size:394K kec
mjd117 l.pdf 
SEMICONDUCTOR MJD117/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A I C J FEATURES DIM MILLIMETERS High DC Current Gain. _ A 6.60 + 0.2 _ B 6.10 + 0.2 hFE=1000(Min.), VCE=-4V, IC=-1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector-Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 +
8.12. Size:250K inchange semiconductor
mjd117.pdf 
isc Silicon PNP Darlington Power Transistor MJD117 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low sp
Другие транзисторы: KTX412T, KTX421U, KTX511T, KTX512T, KTX711T, KTX811T, KTX955T, MJD112L, C3198, MJE13003HV, MJE13004D, MJE13005D, MJE13005DF, MJE13005F, MJE13007F, MJE13009F, MJE5555
