MJD117L Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD117L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: IPAK
MJD117L Transistor Equivalent Substitute - Cross-Reference Search
MJD117L Datasheet (PDF)
mjd112 mjd117.pdf
Order this documentMOTOROLAby MJD112/DSEMICONDUCTOR TECHNICAL DATANPN*MJD112Complementary DarlingtonPNPMJD117*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, converters, and power amplifiers.POWER TRANS
mjd112 mjd117.pdf
MJD112MJD117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP112 AND1TIP117APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix
mjd117.pdf
MJD117D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1171.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted
njvmjd112 njvmjd117.pdf
MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas
mjd117rlg.pdf
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
mjd117t4g.pdf
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
mjd117-1g.pdf
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
mjd117g.pdf
MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features
mjd112 mjd117.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPNMJD117 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBO 100Collector Base Voltage VVCEO 100Collector Emitter Voltage VE
mjd117.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD117 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP1172. COLLECTOR2133. EMITTER MJD117=Device code Solid dot=Green moldinn compound device, if none,the normal deviceMJD117XXXX=CodeXXXXMAXIMUM RATINGS
mjd117 l.pdf
SEMICONDUCTOR MJD117/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.AI C JFEATURESDIM MILLIMETERSHigh DC Current Gain. _A 6.60 + 0.2_B 6.10 + 0.2: hFE=1000(Min.), VCE=-4V, IC=-1A._C 5.0 + 0.2_D 1.10 + 0.2Low Collector-Emitter Saturation Voltage._E 2.70 + 0.2_F 2.30 +
mjd117.pdf
isc Silicon PNP Darlington Power Transistor MJD117DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low sp
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJ421
