Биполярный транзистор KRA723F
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRA723F
Маркировка: MC
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.05
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TFS6
Аналоги (замена) для KRA723F
KRA723F
Datasheet (PDF)
9.1. Size:47K kec
kra727e-kra729e.pdf SEMICONDUCTOR KRA727E~KRA729ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors1 6 DIM MILLIMETERSSimplify Circuit Design _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packing Density.
9.2. Size:383K kec
kra727f-kra729f.pdf SEMICONDUCTOR KRA727F~KRA729FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.
9.3. Size:48K kec
kra727u-kra729u.pdf SEMICONDUCTOR KRA727U~KRA729UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias ResistorsDIM MILLIMETERS1 6_Simplify Circuit Design A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packing D
9.4. Size:67K kec
kra721u-kra726u.pdf SEMICONDUCTOR KRA721U~KRA726UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packin
9.5. Size:68K kec
kra721t-kra726t.pdf SEMICONDUCTOR KRA721T~KRA726TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EK B KFEATURESDIM MILLIMETERS_With Built-in Bias Resistors. A 2.9 + 0.216B 1.6+0.2/-0.1Simplify Circuit Design._C 0.70 0.05+2 5_+D 0.4 0.1Reduce a Quantity of Parts and Manufacturing Process.E 2.
9.6. Size:466K kec
kra721f-kra724f.pdf SEMICONDUCTOR KRA721F~KRA724FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.3_+
9.7. Size:111K kec
kra721e-kra726e.pdf SEMICONDUCTOR KRA721E~KRA726ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERS Simplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05 High Packing D
9.8. Size:423K kec
kra721e-kra726e 1.pdf SEMICONDUCTOR KRA721E~KRA726ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packi
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