KRA757F - Даташиты. Аналоги. Основные параметры
Наименование производителя: KRA757F
Маркировка: KG
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.05 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TFS6
KRA757F Datasheet (PDF)
kra757f-kra759f.pdf
SEMICONDUCTOR KRA757F KRA759F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 Thin Fine Pitch Super
kra757e-kra759e.pdf
SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing
kra757u-kra759u.pdf
SEMICONDUCTOR KRA757U KRA759U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors DIM MILLIMETERS 1 6 _ Simplify Circuit Design A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P
kra757e-kra759e 1.pdf
SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.
Другие транзисторы... KRA754E , KRA754F , KRA754U , KRA755E , KRA755U , KRA756E , KRA756U , KRA757E , MJE340 , KRA757U , KRA758E , KRA758F , KRA758U , KRA759E , KRA759F , KRA759U , KRA760E .
History: KRC408E | 2SD1739 | KRA322 | KRC410E | 2SC412 | DTC014YUB | BF841
History: KRC408E | 2SD1739 | KRA322 | KRC410E | 2SC412 | DTC014YUB | BF841
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667 | 2sc1111 | bc239 transistor equivalent





